Organic semiconductor device having an oxide layer
    1.
    发明授权
    Organic semiconductor device having an oxide layer 有权
    具有氧化物层的有机半导体器件

    公开(公告)号:US06677607B2

    公开(公告)日:2004-01-13

    申请号:US10057367

    申请日:2002-01-25

    IPC分类号: H01L3524

    摘要: A semiconductor device having a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

    摘要翻译: 一种具有柔性或刚性基板(11)的半导体器件,具有栅电极(21),源电极(61,101)和形成在其上的漏极电极(62和102)和有机半导体材料(51,81和 91)至少部分地设置在其上。 栅电极(21)具有通过氧化形成在其周围的薄介电层41。 在许多实施例中,可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。

    Organic semiconductor and method
    2.
    发明授权
    Organic semiconductor and method 失效
    有机半导体和方法

    公开(公告)号:US06603141B2

    公开(公告)日:2003-08-05

    申请号:US10034337

    申请日:2001-12-28

    IPC分类号: H01L2700

    摘要: A semiconductor device formed of a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With appropriate selection of material, the gate electrode (11) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material (14) and each of the source electrode (12) and drain electrode (13). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

    摘要翻译: 由具有形成在其上的栅电极(11),源电极(12)和漏电极(13)的柔性或刚性基板(10)形成的半导体器件和至少部分地设置在其上的有机半导体材料(14)构成。 通过适当选择材料,栅电极(11)将形成肖特基结,在有机半导体材料(14)与源电极(12)和漏电极(13)之间形成欧姆接触。 在许多实施例中,可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。

    High speed controllable load
    3.
    发明授权
    High speed controllable load 有权
    高速可控负载

    公开(公告)号:US09551751B2

    公开(公告)日:2017-01-24

    申请号:US13160710

    申请日:2011-06-15

    IPC分类号: G01R31/00 G01R31/327

    CPC分类号: G01R31/3274 G01R31/3272

    摘要: A high speed controllable load uses a voltage waveform synthesizer and a driver circuit to dynamically control an electronically variable load to generate a current though an arc fault circuit interrupter (AFCI) device under test. Sensors may be used to monitor a source voltage and the output current to generate an arbitrary waveform have a range of voltage and current phase shifts. An optical isolation circuit allows separation of grounds between a control stage and the AFCI device under test.

    摘要翻译: 高速可控负载使用电压波形合成器和驱动电路来动态地控制电子可变负载,以通过被测试的电弧故障电路断续器(AFCI)器件产生电流。 传感器可用于监测源电压,并且输出电流以产生任意波形,具有电压和电流相移的范围。 光隔离电路允许在控制级和被测试的AFCI器件之间分离接地。