Organic semiconductor and method
    1.
    发明授权
    Organic semiconductor and method 失效
    有机半导体和方法

    公开(公告)号:US06603141B2

    公开(公告)日:2003-08-05

    申请号:US10034337

    申请日:2001-12-28

    IPC分类号: H01L2700

    摘要: A semiconductor device formed of a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With appropriate selection of material, the gate electrode (11) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material (14) and each of the source electrode (12) and drain electrode (13). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

    摘要翻译: 由具有形成在其上的栅电极(11),源电极(12)和漏电极(13)的柔性或刚性基板(10)形成的半导体器件和至少部分地设置在其上的有机半导体材料(14)构成。 通过适当选择材料,栅电极(11)将形成肖特基结,在有机半导体材料(14)与源电极(12)和漏电极(13)之间形成欧姆接触。 在许多实施例中,可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。

    Organic semiconductor device having an oxide layer
    2.
    发明授权
    Organic semiconductor device having an oxide layer 有权
    具有氧化物层的有机半导体器件

    公开(公告)号:US06677607B2

    公开(公告)日:2004-01-13

    申请号:US10057367

    申请日:2002-01-25

    IPC分类号: H01L3524

    摘要: A semiconductor device having a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

    摘要翻译: 一种具有柔性或刚性基板(11)的半导体器件,具有栅电极(21),源电极(61,101)和形成在其上的漏极电极(62和102)和有机半导体材料(51,81和 91)至少部分地设置在其上。 栅电极(21)具有通过氧化形成在其周围的薄介电层41。 在许多实施例中,可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。

    Solderable pad with integral series termination resistor
    4.
    发明授权
    Solderable pad with integral series termination resistor 失效
    具有集成串联终端电阻的可焊垫

    公开(公告)号:US5912507A

    公开(公告)日:1999-06-15

    申请号:US18363

    申请日:1998-02-04

    摘要: A microelectronic assembly, such as a surface-mount device or a ball-grid array (BGA) package, has one or more integral resistors. The integral resistors are incorporated into one or more of the microelectronic assembly's electrical leads or connections. The integral resistors preferably terminate in a solderable pad. For example, the BGA package may include an IC chip and interposer. A terminal is located on a surface of the IC chip, on a surface of the interposer, or on the surface of the substrate to which the BGA is mounted. An electrically-resistive material overlies the terminal and electrically couples the terminal to a bond pad, thereby defining an integral resistor. The integral resistors reduce electrical resonances and reflections that may otherwise degrade the signal integrity and reliability of the electrical system employing the device; hence, reduce or eliminate the requirement for discrete resistors for the microelectronic assembly.

    摘要翻译: 诸如表面贴装器件或球栅阵列(BGA)封装的微电子组件具有一个或多个积分电阻器。 集成电阻器被并入到微电子组件的电引线或连接中的一个或多个中。 整体电阻器优选地终止于可焊接焊盘中。 例如,BGA封装可以包括IC芯片和插入器。 端子位于IC芯片的表面上,在中介层的表面上,或位于安装有BGA的基板的表面上。 电阻材料覆盖在端子上并将端子电耦合到接合焊盘,从而限定一个整体电阻器。 积分电阻减少电共振和反射,否则可能会降低采用该器件的电气系统的信号完整性和可靠性; 因此,减少或消除了对于微电子组件的分立电阻器的要求。

    Method and Apparatus to Facilitate Testing of Printed Semiconductor Devices
    5.
    发明申请
    Method and Apparatus to Facilitate Testing of Printed Semiconductor Devices 审中-公开
    促进印刷半导体器件测试的方法和装置

    公开(公告)号:US20090098668A1

    公开(公告)日:2009-04-16

    申请号:US12270544

    申请日:2008-11-13

    IPC分类号: H01L21/66 H01L21/302

    CPC分类号: H01L22/14 H01L51/0005

    摘要: A printing platform receives (102) (preferably in-line with a semiconductor device printing process (101)) a substrate having at least one semiconductor device printed thereon and further having a test structure printed thereon, which test structure comprises at least one printed semiconductor layer. These teachings then provide for the automatic testing (103) of the test structure with respect to at least one static (i.e., relatively unchanging) electrical characteristic metric. The static electrical characteristic metric (or metrics) of choice will likely vary with the application setting but can include, for example, a measure of electrical resistance, a measure of electrical reactance, and/or a measure of electrical continuity. Optionally (though preferably) the semiconductor device printing process itself is then adjusted (105) as a function, at least in part, of this metric.

    摘要翻译: 印刷平台接收(优选地与半导体器件印刷工艺(101)成直角))具有印刷在其上的至少一个半导体器件并且还具有印刷在其上的测试结构的衬底,该测试结构包括至少一个印刷半导体 层。 然后,这些教导提供了关于至少一个静态(即,相对不变的)电特性度量的测试结构的自动测试(103)。 选择的静态电特性度量(或度量)可能随着应用设置而变化,但是可以包括例如电阻的测量,电抗的测量和/或电连续性的测量。 可选地(尽管优选地),然后至少部分地基于该度量来调整(105)半导体器件打印过程本身。

    Nanoparticle Semiconductor Device and Method for Fabricating
    6.
    发明申请
    Nanoparticle Semiconductor Device and Method for Fabricating 审中-公开
    纳米粒子半导体器件及其制造方法

    公开(公告)号:US20090057662A1

    公开(公告)日:2009-03-05

    申请号:US11846805

    申请日:2007-08-29

    IPC分类号: H01L29/12 H01L21/20

    摘要: A low-temperature process for creating a semiconductive device by printing a liquid composition containing semiconducting nanoparticles. The semiconductive device is formed on a polymeric substrate by printing a composition that contains nanoparticles of inorganic semiconductor suspended in a carrier, using a graphic arts printing method. The printed deposit is then heated to remove substantially all of the carrier from the printed deposit. The low-temperature process does not heat the substrate or the printed deposit above 300° C. The mobility of the resulting semiconductive device is between about 10 cm2/Vs and 200 cm2/Vs.

    摘要翻译: 通过印刷含有半导体纳米颗粒的液体组合物来产生半导体器件的低温方法。 使用印刷技术印刷方法,通过印刷含有悬浮在载体中的无机半导体纳米颗粒的组合物,在聚合物基材上形成半导体装置。 然后加热印刷的沉积物以从印刷的沉积物中基本上除去所有的载体。 低温工艺不会将衬底或印刷沉积物加热到300℃以上。所得半导体器件的迁移率在约10cm 2 / Vs至200cm 2 / Vs之间。

    Organic semiconductor inverting circuit
    7.
    发明授权
    Organic semiconductor inverting circuit 失效
    有机半导体反相电路

    公开(公告)号:US07030666B2

    公开(公告)日:2006-04-18

    申请号:US10788627

    申请日:2004-02-27

    IPC分类号: H03B1/00 H03K3/00

    CPC分类号: H03K19/08

    摘要: An organic semiconductor inverting circuit includes at least three organic transistors, an output terminal (110, 210, 310, 410), a reference supply voltage input (115, 215, 315, 415), a first positive supply voltage input (120, 220, 320, 420), and a negative supply voltage input (125, 225, 325, 425). One of the three organic transistors is an input transistor having a gate to which is coupled an input terminal (105, 205, 305, 405). The output terminal (110, 210, 310, 410) is coupled to a first electrode of at least one of the at least three organic transistors.

    摘要翻译: 有机半导体反相电路包括至少三个有机晶体管,输出端(110,210,310,410),参考电源电压输入(115,215,315,415),第一正电源电压输入端(120,220) ,320,420)和负电源电压输入(125,225,325,425)。 三个有机晶体管中的一个是具有与输入端(105,205,305,405)耦合的栅极的输入晶体管。 输出端子(110,210,310,410)耦合到至少三个有机晶体管中的至少一个的第一电极。

    Printed electronic substrate havine photochromic barrier layer
    8.
    发明授权
    Printed electronic substrate havine photochromic barrier layer 失效
    印刷电子基板上有光致变色屏障层

    公开(公告)号:US07667285B2

    公开(公告)日:2010-02-23

    申请号:US11610771

    申请日:2006-12-14

    IPC分类号: H01L31/00

    摘要: A protective photochromic barrier film for a light-sensitive printed electronic substrate. Light-sensitive semiconductor devices on a dielectric substrate are electrically connected by conductors. A barrier layer containing photochromic dyes covers some or all of the light-sensitive semiconductor devices. Upon exposure to visible, infrared, or ultraviolet light, the photochromic dyes change chemical structure and decrease the amount of visible or non-visible light that can impinge upon the light-sensitive electronic devices. Upon removal of the visible or non-visible light, the photochromic dyes either revert to their original structure or maintain their altered state.

    摘要翻译: 用于感光印刷电子基板的保护性光致变色阻挡膜。 电介质基片上的感光半导体器件通过导体电连接。 含有光致变色染料的阻挡层覆盖部分或全部感光半导体器件。 当光可见光,红外光或紫外光照射时,光致变色染料会改变化学结构并减少可能会碰到光敏电子设备的可见光或不可见光的量。 在去除可见光或不可见光时,光致变色染料可以回复到其原始结构或维持其改变的状态。

    Semiconductor Device Having Silane Treated Interface
    9.
    发明申请
    Semiconductor Device Having Silane Treated Interface 审中-公开
    具有硅烷处理界面的半导体器件

    公开(公告)号:US20100032654A1

    公开(公告)日:2010-02-11

    申请号:US12189373

    申请日:2008-08-11

    IPC分类号: H01L51/10

    摘要: A semiconductor device made on a polymer substrate using graphic arts printing technology uses a printable organic semiconductor. An electrode is situated on the substrate, and a dielectric layer is situated over the electrode. Another electrode(s) is situated on the dielectric layer. The exposed surfaces of the dielectric and the top electrode are treated with a reactive silane to alter the surface of the electrode and the dielectric sufficiently to allow an overlying organic semiconductor layer to have good adhesion to both the electrode and the dielectric. In various embodiments, the electrodes may be printed, and the dielectric layer may also be printed.

    摘要翻译: 使用图形印刷技术在聚合物基板上制造的半导体器件使用可印刷的有机半导体。 电极位于衬底上,电介质层位于电极上方。 另一个电极位于电介质层上。 电介质和顶部电极的暴露表面用反应性硅烷处理以充分改变电极和电介质的表面,以允许上覆的有机半导体层对电极和电介质具有良好的粘合性。 在各种实施例中,可以印刷电极,并且还可以印刷电介质层。

    PRINTED ELECTRONIC DEVICE AND METHODS OF DETERMINING THE ELECTRICAL VALUE THEREOF
    10.
    发明申请
    PRINTED ELECTRONIC DEVICE AND METHODS OF DETERMINING THE ELECTRICAL VALUE THEREOF 审中-公开
    印刷电子器件及其电学值的确定方法

    公开(公告)号:US20080124528A1

    公开(公告)日:2008-05-29

    申请号:US11564703

    申请日:2006-11-29

    IPC分类号: H05K1/16 H05K3/46

    摘要: A printed electronic device and methods for determining the electrical value of the device. A dielectric material is contact printed on a substrate using a preset force. The substrate has a pressure sensitive material that is optically responsive in direct proportion to the amount of force imparted by the contact printing. The force of the contact printing causes the pressure sensitive material to form a pattern that is quantifiable to the amount of force. The pattern is then optically inspected and compared to sets of standards in order to quantify the amount of force that was used in printing. The thickness of the printed dielectric material is then calculated based on the quantified force by comparing to another set of standards. The electrical value of the printed material is calculated based on the calculated thickness of the printed dielectric material, the surface area of the printed dielectric material, and the dielectric constant of the dielectric material.

    摘要翻译: 一种印刷电子装置和用于确定装置的电气值的方法。 使用预设的力将电介质材料接触印刷在基板上。 衬底具有与由接触印刷施加的力成正比的光学响应的​​压敏材料。 接触印刷的力导致压敏材料形成可量化为力的图案。 然后对该图案进行光学检查,并与标准组进行比较,以量化印刷中使用的力的量。 然后通过与另一组标准相比较,基于量化力计算印刷电介质材料的厚度。 基于所计算的印刷电介质材料的厚度,印刷电介质材料的表面积和介电材料的介电常数来计算印刷材料的电值。