摘要:
A semiconductor device formed of a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With appropriate selection of material, the gate electrode (11) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material (14) and each of the source electrode (12) and drain electrode (13). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.
摘要:
A semiconductor device having a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.
摘要:
The surface-mount device package comprises a pad located on a face of the surface-mount device, a solder bump bonded to the pad, and a terminal spaced radially apart from the pad. A terminal surrounds the pad in at least one common plane that bisects the pad and the terminal. An electrically resistive volume intervenes between the pad and the terminal. The pad is electrically coupled to the terminal through the resistive volume. The terminal, the pad, and the electrically resistive volume cooperate to form a passive component associated with at least one device interconnection. The passive component preferable comprises an integral resistor. The integral resistor serves to eliminate or at least substantially reduce electrical resonances and reflections that may otherwise degrade the signal integrity.
摘要:
A microelectronic assembly, such as a surface-mount device or a ball-grid array (BGA) package, has one or more integral resistors. The integral resistors are incorporated into one or more of the microelectronic assembly's electrical leads or connections. The integral resistors preferably terminate in a solderable pad. For example, the BGA package may include an IC chip and interposer. A terminal is located on a surface of the IC chip, on a surface of the interposer, or on the surface of the substrate to which the BGA is mounted. An electrically-resistive material overlies the terminal and electrically couples the terminal to a bond pad, thereby defining an integral resistor. The integral resistors reduce electrical resonances and reflections that may otherwise degrade the signal integrity and reliability of the electrical system employing the device; hence, reduce or eliminate the requirement for discrete resistors for the microelectronic assembly.
摘要:
A printing platform receives (102) (preferably in-line with a semiconductor device printing process (101)) a substrate having at least one semiconductor device printed thereon and further having a test structure printed thereon, which test structure comprises at least one printed semiconductor layer. These teachings then provide for the automatic testing (103) of the test structure with respect to at least one static (i.e., relatively unchanging) electrical characteristic metric. The static electrical characteristic metric (or metrics) of choice will likely vary with the application setting but can include, for example, a measure of electrical resistance, a measure of electrical reactance, and/or a measure of electrical continuity. Optionally (though preferably) the semiconductor device printing process itself is then adjusted (105) as a function, at least in part, of this metric.
摘要:
A low-temperature process for creating a semiconductive device by printing a liquid composition containing semiconducting nanoparticles. The semiconductive device is formed on a polymeric substrate by printing a composition that contains nanoparticles of inorganic semiconductor suspended in a carrier, using a graphic arts printing method. The printed deposit is then heated to remove substantially all of the carrier from the printed deposit. The low-temperature process does not heat the substrate or the printed deposit above 300° C. The mobility of the resulting semiconductive device is between about 10 cm2/Vs and 200 cm2/Vs.
摘要:
An organic semiconductor inverting circuit includes at least three organic transistors, an output terminal (110, 210, 310, 410), a reference supply voltage input (115, 215, 315, 415), a first positive supply voltage input (120, 220, 320, 420), and a negative supply voltage input (125, 225, 325, 425). One of the three organic transistors is an input transistor having a gate to which is coupled an input terminal (105, 205, 305, 405). The output terminal (110, 210, 310, 410) is coupled to a first electrode of at least one of the at least three organic transistors.
摘要:
A protective photochromic barrier film for a light-sensitive printed electronic substrate. Light-sensitive semiconductor devices on a dielectric substrate are electrically connected by conductors. A barrier layer containing photochromic dyes covers some or all of the light-sensitive semiconductor devices. Upon exposure to visible, infrared, or ultraviolet light, the photochromic dyes change chemical structure and decrease the amount of visible or non-visible light that can impinge upon the light-sensitive electronic devices. Upon removal of the visible or non-visible light, the photochromic dyes either revert to their original structure or maintain their altered state.
摘要:
A semiconductor device made on a polymer substrate using graphic arts printing technology uses a printable organic semiconductor. An electrode is situated on the substrate, and a dielectric layer is situated over the electrode. Another electrode(s) is situated on the dielectric layer. The exposed surfaces of the dielectric and the top electrode are treated with a reactive silane to alter the surface of the electrode and the dielectric sufficiently to allow an overlying organic semiconductor layer to have good adhesion to both the electrode and the dielectric. In various embodiments, the electrodes may be printed, and the dielectric layer may also be printed.
摘要:
A printed electronic device and methods for determining the electrical value of the device. A dielectric material is contact printed on a substrate using a preset force. The substrate has a pressure sensitive material that is optically responsive in direct proportion to the amount of force imparted by the contact printing. The force of the contact printing causes the pressure sensitive material to form a pattern that is quantifiable to the amount of force. The pattern is then optically inspected and compared to sets of standards in order to quantify the amount of force that was used in printing. The thickness of the printed dielectric material is then calculated based on the quantified force by comparing to another set of standards. The electrical value of the printed material is calculated based on the calculated thickness of the printed dielectric material, the surface area of the printed dielectric material, and the dielectric constant of the dielectric material.