公开(公告)号：US20140096793A1

公开(公告)日：2014-04-10

申请号：US14045325

申请日：2013-10-03

Applicant: SunEdison, Inc.

Inventor： Sasha J. Kweskin ,  Larry W. Shive

IPC: H01L21/02

CPC classification number: H01L21/02054 ,  H01L21/02024 ,  H01L21/02052

Abstract: A method is provided for cleaning a surface of a semiconductor wafer comprising: (a) contacting the front surface of the wafer with a slurry comprising an abrasive agent and a polymeric rheological modifier; (b) contacting the front surface of the semiconductor wafer with an oxidant; and (c) irradiating the front surface of the semiconductor wafer with ultraviolet light.

Abstract translation: 提供了一种用于清洁半导体晶片的表面的方法，包括：（a）使晶片的前表面与包含研磨剂和聚合物流变改性剂的浆料接触; （b）使半导体晶片的前表面与氧化剂接触; 和（c）用紫外线照射半导体晶片的前表面。