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    DIELECTRIC COMPOSITION, ELECTRONIC DEVICE, AND MULTILAYER ELECTRONIC DEVICE
    1.
    发明申请
    DIELECTRIC COMPOSITION, ELECTRONIC DEVICE, AND MULTILAYER ELECTRONIC DEVICE 有权

    公开(公告)号：US20220254569A1

    公开(公告)日：2022-08-11

    申请号：US17589206

    申请日：2022-01-31

    Applicant: TDK CORPORATION

    Inventor： Takuma ARIIZUMI ,  Taku MURAKAMI ,  Nobuto MORIGASAKI ,  Toshihiko KANEKO ,  Yasuhiro ITO

    IPC: H01G4/12 ,  H01G4/30 ,  C04B35/468

    Abstract: A dielectric composition includes a main phase and segregation phases each including RE (at least one rare earth element). The main phase includes a main component having a perovskite crystal structure of ABO3 (A is one or more selected from Ba, Sr, and Ca, and B is one or more selected from Ti, Zr, and Hf). The segregation phases are classified into first segregation phases whose atomic ratio of Si to RE is 0 or more and 0.20 or less and second segregation phases whose atomic ratio of Si to the RE is more than 0.20. 0≤S1/S2≤0.10 is satisfied on a cross section of the dielectric composition, where S1 is an area ratio of the first segregation phases, and S2 is an area ratio of the second segregation phases. An atomic ratio of Si to RE in the second segregation phases is 0.80 or less on average.

    DIELECTRIC CERAMIC COMPOSITION AND ELECTRONIC DEVICE
    2.
    发明申请
    DIELECTRIC CERAMIC COMPOSITION AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20210304966A1

    公开(公告)日：2021-09-30

    申请号：US17195366

    申请日：2021-03-08

    Applicant: TDK CORPORATION

    Inventor： Taku MURAKAMI ,  Nobuto MORIGASAKI ,  Dan SAKURAI ,  Takuma ARIIZUMI ,  Toshihiko KANEKO

    IPC: H01G4/12 ,  H01G4/30 ,  C04B35/468

    Abstract: A dielectric ceramic composition includes a barium titanate, an oxide of an R element, an oxide of an M element, and an oxide containing Si. The R element is one or more elements selected from Eu, Gd, Tb, Dy, Y, Ho, and Yb. The M element is one or more elements selected from Mg, Ca, Mn, V, and Cr. A ratio of an amount of the oxide of the R element in terms of R2O3 to an amount of the oxide containing Si in terms of SiO2 is 0.8:1 to 2.2:1. A ratio of an amount of the oxide of the M element in terms of MO to the amount of the oxide containing Si in terms of SiO2 is 0.2:1 to 1.8:1.50% or more of the number of dielectric particles constituting the dielectric ceramic composition is core-shell dielectric particles having a core-shell structure.

    AMORPHOUS DIELECTRIC FILM AND ELECTRONIC COMPONENT
    3.
    发明申请
    AMORPHOUS DIELECTRIC FILM AND ELECTRONIC COMPONENT 有权
    非晶电介质膜和电子元件

    公开(公告)号：US20140378295A1

    公开(公告)日：2014-12-25

    申请号：US14310212

    申请日：2014-06-20

    Applicant: TDK Corporation

    Inventor： Toshihiko KANEKO ,  Saori TAKEDA ,  Yuki YAMASHITA ,  Junichi YAMAZAKI

    IPC: C04B35/057 ,  C04B35/465 ,  C04B35/49

    CPC classification number: C04B35/49 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/6562 ,  H01L28/40

    Abstract: The present invention aims to provide an amorphous dielectric film and an electronic component in which the relative permittivity and the temperature coefficient of electrostatic capacitance can be maintained and the withstand voltage can be increased even if the dielectric film is further thinned. The amorphous dielectric film of the present invention is characterized in that it is a dielectric film composed of an amorphous composition with A-B—O as the main component, wherein A contains at least two elements selected from the group consisting of Ba, Ca and Sr, and B contains Zr. When the main component of the dielectric film is represented by (BaxCaySrz)α—B—O, x, y and z meet the conditions of 0≦x≦1, 0≦y≦1, 0≦z≦1, respectively, x+y+z=1 and at least any two of x, y and z are 0.1 or more. When A/B is represented by α, 0.5≦α≦1.5.

    Abstract translation: 本发明的目的在于提供一种非晶介质膜和电子元件，其中可以保持相对介电常数和静电电容的温度系数，并且即使电介质膜进一步薄化也可以提高耐电压。 本发明的非晶质介电体膜的特征在于，由作为主成分的无定形组合物构成的电介质膜，其中，A含有选自Ba，Ca，Sr中的至少2种以上的元素， B含有Zr。 当电介质膜的主要成分由（BaxCaySrz）α-B-O表示时，x，y和z分别满足0＆nlE; x＆nlE; 1,0，nlE; y＆nlE; 1,0和nlE; z＆nlE; 1的条件x + y + z = 1，x，y和z中的至少任意两个为0.1以上。 当A / B由α表示时，0.5＆nlE;α＆nlE; 1.5。

    MULTILAYER CERAMIC CAPACITOR
    6.
    发明申请
    MULTILAYER CERAMIC CAPACITOR 审中-公开

    公开(公告)号：US20190237264A1

    公开(公告)日：2019-08-01

    申请号：US16250911

    申请日：2019-01-17

    Applicant: TDK CORPORATION

    Inventor： Dan SAKURAI ,  Toshihiko KANEKO ,  Nobuto MORIGASAKI ,  Toshinari TAKAHASHI ,  Yasuhiro ITO

    IPC: H01G4/30 ,  H01G4/12 ,  H01G4/008

    CPC classification number: H01G4/30 ,  H01G4/008 ,  H01G4/1245

    Abstract: The object of the present invention is to provide the multilayer ceramic capacitor having no deterioration of dielectric properties even in case an inhibitor of an internal electrode layer is pushed out to a dielectric layer when sintering. The multilayer ceramic capacitor 1 including a capacitor element body 10 comprising a dielectric layer 2 and an internal electrode layer 3 stacked in an alternating manner, wherein when Za represents Zr concentration of an dielectric particle in a center part 6 of the dielectric layer 2 and Zb represents Zr concentration of a dielectric particle near the internal electrode layer, 0

    MULTILAYER CAPACITOR
    8.
    发明申请
    MULTILAYER CAPACITOR 有权

    公开(公告)号：US20220384107A1

    公开(公告)日：2022-12-01

    申请号：US17739482

    申请日：2022-05-09

    Applicant: TDK CORPORATION

    Inventor： Takuya IMAEDA ,  Takashi MORITA ,  Masashi HATANAKA ,  Toshihiko KANEKO

    IPC: H01G4/005 ,  H01G4/30 ,  H01G4/248

    Abstract: An element body of a multilayer capacitor has a plurality of first electrodes and a plurality of second electrodes. At least one of the first electrodes is curved such that a first main body portion is located on an outer side of a first extending portion in a first direction, and at least one of the second electrodes is curved such that a second main body portion is located on an outer side of a second extending portion in the first direction. The following expressions (1) to (6) are satisfied for lengths L0 to L4 in a second direction and distances TL1 to TL3 between main surfaces. 0.03≤L1/L0≤0.1  (1) 0.1≤L2/L0≤0.25  (2) 0.75≤L3/L0≤0.9  (3) 0.9≤L4/L0≤0.97  (4) 0≤(TL1−TL2)/TL1≤0.02  (5) 0≤(TL1−TL3)/TL1≤0.02  (6)

    MULTILAYER CERAMIC ELECTRONIC DEVICE WITH DIELECTRIC LAYERS AND INTERNAL ELECTRODE LAYERS
    10.
    发明申请
    MULTILAYER CERAMIC ELECTRONIC DEVICE WITH DIELECTRIC LAYERS AND INTERNAL ELECTRODE LAYERS 审中-公开

    公开(公告)号：US20200035414A1

    公开(公告)日：2020-01-30

    申请号：US16589884

    申请日：2019-10-01

    Applicant: TDK Corporation

    Inventor： Shogo MUROSAWA ,  Toshihiko KANEKO

    IPC: H01G4/012 ,  H01G4/30 ,  H01G4/12 ,  H01G4/232

    Abstract: A multilayer ceramic electronic device comprising: a ceramic element body, in which a plurality of dielectric layers and a plurality of internal electrode layers are alternately stacked, and at least a pair of external electrodes which are connected to the internal electrode layers on surfaces of the ceramic element body; a thickness of the dielectric layers is 0.4 μm or less, a width (W0) of the ceramic element body along a width-direction is 0.59 mm or less, a gap (Wgap) between an outer face of the ceramic element body and an end of the internal electrode layers along width-direction of the ceramic element body is 0.010 to 0.025 mm, and a ratio (Wgap/W0) of the gap with respect to the width is 0.025 or more.

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