MULTILAYER ELECTRONIC DEVICE
    2.
    发明公开

    公开(公告)号:US20240047136A1

    公开(公告)日:2024-02-08

    申请号:US18357505

    申请日:2023-07-24

    CPC classification number: H01G4/1209 H01G4/30

    Abstract: A multilayer electronic device includes an element body and a pair of external electrodes. The element body includes an interior region in which inner dielectric layers and internal electrode layers are alternately laminated and an exterior region located outside the interior region in its lamination direction. The pair of external electrodes exists on surfaces of the element body. Main-phase particles in the inner dielectric layers and outer dielectric layers of the exterior region include a main component having a perovskite crystal structure represented by a general formula of ABO3. r1

    DIELECTRIC COMPOSITION, ELECTRONIC DEVICE, AND MULTILAYER ELECTRONIC DEVICE

    公开(公告)号:US20220254569A1

    公开(公告)日:2022-08-11

    申请号:US17589206

    申请日:2022-01-31

    Abstract: A dielectric composition includes a main phase and segregation phases each including RE (at least one rare earth element). The main phase includes a main component having a perovskite crystal structure of ABO3 (A is one or more selected from Ba, Sr, and Ca, and B is one or more selected from Ti, Zr, and Hf). The segregation phases are classified into first segregation phases whose atomic ratio of Si to RE is 0 or more and 0.20 or less and second segregation phases whose atomic ratio of Si to the RE is more than 0.20. 0≤S1/S2≤0.10 is satisfied on a cross section of the dielectric composition, where S1 is an area ratio of the first segregation phases, and S2 is an area ratio of the second segregation phases. An atomic ratio of Si to RE in the second segregation phases is 0.80 or less on average.

    DIELECTRIC CERAMIC COMPOSITION AND ELECTRONIC DEVICE

    公开(公告)号:US20210304966A1

    公开(公告)日:2021-09-30

    申请号:US17195366

    申请日:2021-03-08

    Abstract: A dielectric ceramic composition includes a barium titanate, an oxide of an R element, an oxide of an M element, and an oxide containing Si. The R element is one or more elements selected from Eu, Gd, Tb, Dy, Y, Ho, and Yb. The M element is one or more elements selected from Mg, Ca, Mn, V, and Cr. A ratio of an amount of the oxide of the R element in terms of R2O3 to an amount of the oxide containing Si in terms of SiO2 is 0.8:1 to 2.2:1. A ratio of an amount of the oxide of the M element in terms of MO to the amount of the oxide containing Si in terms of SiO2 is 0.2:1 to 1.8:1.50% or more of the number of dielectric particles constituting the dielectric ceramic composition is core-shell dielectric particles having a core-shell structure.

    MULTILAYER ELECTRONIC DEVICE
    6.
    发明公开

    公开(公告)号:US20240177936A1

    公开(公告)日:2024-05-30

    申请号:US18498794

    申请日:2023-10-31

    CPC classification number: H01G4/30 H01G4/008 H01G4/012 H01G4/1227

    Abstract: A multilayer electronic device includes an element body including an interior region and an exterior region and a pair of external electrodes. The interior region includes inner dielectric layers and internal electrode layers laminated alternately. The exterior region is disposed outwards from the interior region in a lamination direction. The pair of external electrodes is disposed on a surface of the element body and connected to the internal electrode layers. DRAa DRBb>DRBc are satisfied, where “RA” includes an element having a highest mole ratio among “RE” in the inner dielectric layers of a third region at a center of the interior region in the lamination direction, “RB” includes an element having a highest mole ratio among “RE” in a first region at a center of the exterior region in the lamination direction, and “RA” and “RB” are different from each other.

    DIELECTRIC COMPOSITION, ELECTRONIC DEVICE, AND MULTILAYER ELECTRONIC DEVICE

    公开(公告)号:US20220254568A1

    公开(公告)日:2022-08-11

    申请号:US17588582

    申请日:2022-01-31

    Abstract: A dielectric composition includes main-phase particles each including a main component having a perovskite crystal structure represented by a general formula of ABO3. At least a part of the main-phase particles has a core-shell structure. The dielectric composition includes RA, RB, M, and Si. Each of A, B, RA, RB, and M is one or more elements selected from a specific element group. SRA/SRB>CRA/CRB is satisfied, where CRA is an RA content (mol %) to the main component in terms of RA2O3, and CRB is an RB content (mol %) to the main component in terms of RB2O3, in the dielectric composition, and SRA is an average RA content (mol %), and SRB is an average RB content (mol %), in a shell part of the core-shell structure.

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