MAGNETO-RESISTIVE EFFECT ELEMENT
    1.
    发明申请

    公开(公告)号:US20180292472A1

    公开(公告)日:2018-10-11

    申请号:US15908066

    申请日:2018-02-28

    Abstract: A magneto-resistive effect element includes a magnetization free layer, an intermediate layer, and a magnetization pinned layer. The magnetization free layer extends along a first plane. The intermediate layer extends along the first plane, and is stacked on the magnetization free layer. The magnetization pinned layer extends along the first plane, and is provided on side opposite to the magnetization free layer with the intermediate layer being interposed therebetween. Here, the magnetization free layer includes an end surface that has a maximum inclination angle of 42° or less relative to the first plane.

    MAGNETO-RESISTIVE EFFECT ELEMENT
    2.
    发明申请

    公开(公告)号:US20200300942A1

    公开(公告)日:2020-09-24

    申请号:US16896284

    申请日:2020-06-09

    Abstract: A magneto-resistive effect element includes a magnetization free layer, an intermediate layer, and a magnetization pinned layer. The magnetization free layer extends along a first plane. The intermediate layer extends along the first plane, and is stacked on the magnetization free layer. The magnetization pinned layer extends along the first plane, and is provided on side opposite to the magnetization free layer with the intermediate layer being interposed therebetween. Here, the magnetization free layer includes an end surface that has a maximum inclination angle of 42° or less relative to the first plane.

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