OPTICAL MODULATOR
    2.
    发明申请
    OPTICAL MODULATOR 审中-公开

    公开(公告)号:US20200310170A1

    公开(公告)日:2020-10-01

    申请号:US16651633

    申请日:2018-09-28

    Abstract: An optical modulator includes: a substrate; a waveguide layer including first and second optical waveguides formed of an electro-optic material film on the substrate to have a ridge shape and to be disposed adjacent to each other; an RF part that applies a modulated signal to the optical waveguides; and a DC part that applies a DC bias to the optical waveguides. The DC part includes: a buffer layer covering at least upper surfaces of the optical waveguides; a first bias electrode opposed to the first optical waveguide through the buffer layer; and a second bias electrode provided adjacent to the first bias electrode. A first DC bias voltage is applied between the first and second bias electrodes. A waveguide layer removal area in which at least part of the waveguide layer is removed is provided at least under an area between the first and second bias electrodes.

    ELECTRO-OPTICAL COMPONENT AND OPTICAL MODULATION COMPONENT

    公开(公告)号:US20250130448A1

    公开(公告)日:2025-04-24

    申请号:US18918185

    申请日:2024-10-17

    Abstract: An electro-optical component includes: a single crystal substrate; an optical waveguide comprising a dielectric thin film formed in contact with the main surface of the single crystal substrate; and an electrode configured to apply voltage to the optical waveguide, wherein the dielectric thin film is made of a lithium niobate film that is an epitaxial film with a c-axis orientation, and an X-ray intensity ratio (LiNb3O8(60−2)/LiNbO3(006)) of LiNb3O8 to LiNbO3 is 0.02 or more.

    SUBSTRATE WITH DIELECTRIC THIN FILM, OPTICAL WAVEGUIDE COMPONENT, AND OPTICAL MODULATION COMPONENT

    公开(公告)号:US20250129516A1

    公开(公告)日:2025-04-24

    申请号:US18919683

    申请日:2024-10-18

    Abstract: A substrate with a dielectric thin film includes: a single crystal substrate; and a dielectric thin film formed in contact with a main surface of the single crystal substrate, wherein the dielectric thin film has a thickness of 0.5 μm to 2 μm and is made of a lithium niobate film that is an epitaxial film with a c-axis orientation, the dielectric thin film has a twin crystal structure of LiNbO3 of a first crystal and a second crystal corresponding to a crystal in which the first crystal is rotated 180° around the c-axis, the first crystal and the second crystal in an upper region of the dielectric thin film, excluding a lower region from the single crystal substrate to half of a thickness direction in the dielectric film, have maximum domain widths of 80 nm to 300 nm.

    OPTICAL MODULATOR
    5.
    发明申请
    OPTICAL MODULATOR 审中-公开

    公开(公告)号:US20200218126A1

    公开(公告)日:2020-07-09

    申请号:US16641225

    申请日:2018-07-31

    Abstract: An optical modulator includes: first and second optical waveguides formed of an electro-optic material film on a substrate so as to have a ridge shape and to be disposed adjacent to each other; a buffer layer covering at least the upper surfaces of the first and second optical waveguides; and first and second signal electrodes provided above the buffer layer. The first and second signal electrodes have, respectively, first and second lower layer parts opposite, respectively, to the first and second optical waveguides through the buffer layer; and first and second upper layer parts provided, respectively, above the first and second lower layer parts. Widths of the lower surfaces of the first and second lower layer parts are smaller than widths of the first and second upper layer parts.

    ELECTRO-OPTICAL COMPONENT AND OPTICAL MODULATION COMPONENT

    公开(公告)号:US20250130449A1

    公开(公告)日:2025-04-24

    申请号:US18918299

    申请日:2024-10-17

    Abstract: An electro-optical component includes: a single crystal substrate; an optical waveguide made of a dielectric thin film formed in contact with a main surface of the single crystal substrate; and an electrode configured to apply voltage to the optical waveguide, wherein the dielectric thin film is made of a lithium niobate film that is an epitaxial film with a c-axis orientation, and a c-axis length of the lithium niobate film is 13.88 Å or more.

    OPTICAL MODULATOR
    8.
    发明申请
    OPTICAL MODULATOR 审中-公开

    公开(公告)号:US20190146302A1

    公开(公告)日:2019-05-16

    申请号:US16095116

    申请日:2017-04-07

    CPC classification number: G02F1/225 G02F1/035 G02F2001/212 G02F2202/20

    Abstract: A single drive type optical modulator has good high-frequency characteristics and reduced wavelength chirp of the modulated light. An optical modulator is provided with a Mach-Zehnder optical waveguide including first and second optical waveguides, a buffer layer covering the first and second optical waveguides, and an electrode layer including first and second ground electrodes and a signal electrode positioned between the first and second ground electrodes in a plan view. The signal electrode has a first lower surface covering the first optical waveguide through the buffer layer, the first ground electrode has a first lower surface covering the second optical waveguide through the buffer layer and a second lower surface positioned above the first lower surface, and a gap between the signal electrode and the second ground electrode that is larger than a gap between the signal electrode and the first ground electrode.

    SUBSTRATE WITH DIELECTRIC THIN FILM, OPTICAL WAVEGUIDE ELEMENT, AND OPTICAL MODULATION ELEMENT

    公开(公告)号:US20250028194A1

    公开(公告)日:2025-01-23

    申请号:US18736684

    申请日:2024-06-07

    Abstract: A substrate with a dielectric thin film 1 includes a single-crystal substrate, a stress relaxation layer, and a dielectric thin film, in which the stress relaxation layer is made of a c-axis-oriented epitaxial film, and includes a twin crystal structure of LiNbO3 including a first and a second crystal existing at a position obtained by rotating the first crystal 180° about a c-axis and a LiNb3O8 phase, the dielectric thin film is made of a lithium niobate film which is a c-axis-oriented epitaxial film, has the twin crystal structure of LiNbO3, has a film thickness of 0.5 μm to 2 μm, and has a maximum domain width greater than a maximum domain width of the stress relaxation layer, and a percentage of a film thickness of the stress relaxation layer to the film thickness of the dielectric thin film is 5% to 25%.

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