公开(公告)号：US20220065900A1

公开(公告)日：2022-03-03

申请号：US17463112

申请日：2021-08-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： LEI DING ,  SRINATH MATHUR RAMASWAMY ,  DOK WON LEE ,  BAHER HAROUN ,  WAI LEE ,  STEVEN JOHN LOVELESS

IPC: G01R15/20 ,  G01R19/10

Abstract: In a described example, a circuit includes a sensor circuit including multiple magnetic field sensors having respective sensor outputs. The magnetic field sensors are configured to provide magnetic field sensor signals at the respective sensor outputs representative of a measure of current flow through a conductive structure. A combiner interface has combiner inputs and a combiner output. The combiner inputs are coupled to the respective sensor outputs. The combiner interface is configured to provide an aggregate sensor measurement at the combiner output responsive to the magnetic field sensor signals, in which the aggregate sensor measurement is decoupled from magnetic fields generated responsive to the current flow through the conductive structure.

公开(公告)号：US20190178730A1

公开(公告)日：2019-06-13

申请号：US15835048

申请日：2017-12-07

Applicant: Texas Instruments Incorporated

Inventor： DOK WON LEE

IPC: G01L1/12 ,  H01L41/12 ,  G01B7/24

Abstract: A strain gauge sensor includes a substrate, at least one resistor comprising a magnetoresistive material on the substrate. The magnetoresistive material exhibits a magnetostriction coefficient λ that is greater than or equal to () |2| parts per million (ppm) and an anisotropic magnetoresistance effect with an anisotropic magnetoresistance of greater than or equal to () 2% Δ R/R. The strain gauge sensor consists of a single layer of the magnetoresistive material. At least a first contact to the resistor provides a sensor input and a second contact to the resistor provides a sensor output.

公开(公告)号：US20170236998A1

公开(公告)日：2017-08-17

申请号：US15041575

申请日：2016-02-11

Applicant: Texas Instruments Incorporated

Inventor： DOK WON LEE ,  WILLIAM DAVID FRENCH ,  RICKY ALAN JACKSON ,  FUCHAO WANG

IPC: H01L43/12 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L27/22 ,  H01L43/08

Abstract: An integrated device includes a substrate having a semiconductor surface layer including functional circuitry, a lower metal stack on the semiconductor surface layer, an interlevel dielectric (ILD) layer on the lower metal stack, a top metal layer providing AMR contact pads and bond pads coupled to the AMR contact pads in the ILD layer. An AMR device is above the lower metal stack lateral to the functional circuitry including a patterned AMR stack including a seed layer, an AMR material layer, and a capping layer, wherein the seed layer is coupled to the AMR contact pads by a coupling structure. A protective overcoat (PO layer) is over the AMR stack. There are openings in the PO layer exposing the bond pads.

公开(公告)号：US20170175259A1

公开(公告)日：2017-06-22

申请号：US14979003

申请日：2015-12-22

Applicant: Texas Instruments Incorporated

Inventor： DOK WON LEE ,  MONA EISSA ,  NEAL THOMAS MURPHY

IPC: C23C16/06 ,  C23C16/56 ,  G01R33/04

CPC classification number: C23C16/06 ,  C23C16/56 ,  G01R33/04 ,  G01R33/045 ,  G01R33/05

Abstract: A method of magnetic forming an integrated fluxgate sensor includes providing a patterned magnetic core on a first nonmagnetic metal or metal alloy layer on a dielectric layer over a first metal layer that is on or in an interlevel dielectric layer (ILD) which is on a substrate. A second nonmagnetic metal or metal alloy layer is deposited including over and on sidewalls of the magnetic core. The second nonmagnetic metal or metal alloy layer is patterned, where after patterning the second nonmagnetic metal or metal alloy layer together with the first nonmagnetic metal or metal alloy layer encapsulates the magnetic core to form an encapsulated magnetic core. After patterning, the encapsulated magnetic core is magnetic field annealed using an applied magnetic field having a magnetic field strength of at least 0.1 T at a temperature of at least 150° C.