公开(公告)号：US20170236998A1

公开(公告)日：2017-08-17

申请号：US15041575

申请日：2016-02-11

Applicant: Texas Instruments Incorporated

Inventor： DOK WON LEE ,  WILLIAM DAVID FRENCH ,  RICKY ALAN JACKSON ,  FUCHAO WANG

IPC: H01L43/12 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L27/22 ,  H01L43/08

Abstract: An integrated device includes a substrate having a semiconductor surface layer including functional circuitry, a lower metal stack on the semiconductor surface layer, an interlevel dielectric (ILD) layer on the lower metal stack, a top metal layer providing AMR contact pads and bond pads coupled to the AMR contact pads in the ILD layer. An AMR device is above the lower metal stack lateral to the functional circuitry including a patterned AMR stack including a seed layer, an AMR material layer, and a capping layer, wherein the seed layer is coupled to the AMR contact pads by a coupling structure. A protective overcoat (PO layer) is over the AMR stack. There are openings in the PO layer exposing the bond pads.

公开(公告)号：US20150221524A1

公开(公告)日：2015-08-06

申请号：US14172497

申请日：2014-02-04

Applicant: Texas Instruments Incorporated

Inventor： ELIZABETH COSTNER STEWART ,  NENG JIANG ,  YUNG SHAN CHANG ,  RICKY ALAN JACKSON

IPC: H01L21/3213

CPC classification number: H01L21/32136 ,  H01L21/32139

Abstract: A method of etching a metal containing layer including a metal including material includes providing a substrate including a top semiconductor surface having the metal containing layer thereon. A photoresist pattern is formed from a photoresist layer on the metal containing layer including forming sloped edge regions of the photoresist layer, wherein the sloped edge regions have an average angle over a full length of the sloped edge regions of from ten (10) to fifty (50) degrees. The metal containing layer is dry etched using the photoresist pattern, wherein the sloped edge regions of the photoresist layer reduce deposition and growth of an etch byproduct including the metal including material into sidewalls of the photoresist layer (metal/polymer sidewall defect) as compared to a conventional vertical (or near-vertical) edge of the photoresist layer.

Abstract translation: 包括金属包括材料的含金属层的蚀刻方法包括提供包括其上具有含金属层的顶部半导体表面的基板。 光致抗蚀剂图案由包含形成光致抗蚀剂层的倾斜边缘区域的含金属层上的光致抗蚀剂层形成，其中倾斜边缘区域在倾斜边缘区域的整个长度上具有从10（10）到50 （50）度。 使用光致抗蚀剂图案干法蚀刻含金属层，其中光致抗蚀剂层的倾斜边缘区域减少了包括金属的蚀刻副产物的沉积和生长，所述蚀刻副产物与光致抗蚀剂层的侧壁（金属/聚合物侧壁缺陷）相比，与 光致抗蚀剂层的常规垂直（或近垂直）边缘。