公开(公告)号：US20240112947A1

公开(公告)日：2024-04-04

申请号：US17977250

申请日：2022-10-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Scott Kelly Montgomery ,  James Todd ,  Yanbiao Pan ,  Jeffery Nilles

IPC: H01L21/762 ,  H01L27/06

CPC classification number: H01L21/76224 ,  H01L27/0629

Abstract: The present disclosure generally relates to shallow trench isolation (STI) processing with local oxidation of silicon (LOCOS), and an integrated circuit formed thereby. In an example, an integrated circuit includes a semiconductor layer, a LOCOS layer, an STI structure, and a passive circuit component. The semiconductor layer is over a substrate. The LOCOS layer is over the semiconductor layer. The STI structure extends into the semiconductor layer. The passive circuit component is over and touches the LOCOS layer.