公开(公告)号：US11158642B2

公开(公告)日：2021-10-26

申请号：US15893323

申请日：2018-02-09

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Carl Sebastian Morandi ,  Susan Trolier-McKinstry ,  Kezhakkedath Ramunni Udayakumar ,  John Anthony Rodriguez ,  Bhaskar Srinivasan

IPC: H01L27/108 ,  H01L27/11507 ,  H01L49/02

Abstract: In some examples, a system comprises a capacitor including a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film. The capacitor further comprises a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer.

公开(公告)号：US11849590B2

公开(公告)日：2023-12-19

申请号：US17479542

申请日：2021-09-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Carl Sebastian Morandi ,  Susan Trolier-McKinstry ,  Kezhakkedath Ramunni Udayakumar ,  John Anthony Rodriguez ,  Bhaskar Srinivasan

IPC: H01L27/11507 ,  H10B53/30 ,  H01L49/02

CPC classification number: H10B53/30 ,  H01L28/55 ,  H01L28/56 ,  H01L28/57

Abstract: In some examples, a system comprises a capacitor including a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film. The capacitor further comprises a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer.