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1.
公开(公告)号:US09318222B2
公开(公告)日:2016-04-19
申请号:US14108489
申请日:2013-12-17
Applicant: Texas Instruments Incorporated
Inventor: Devanathan Varadarajan , Raghavendra Prasad KS , Harsharaj Ellur
CPC classification number: G11C29/4401 , G11C29/785 , G11C2029/0409 , G11C2029/4402
Abstract: A built-in self-test (BIST) circuit to test one or more memory blocks on an integrated circuit. The one or more memory blocks further includes a first memory block and a second memory block A built-in soft-repair controller (BISoR) is provided to soft repair the one or more memory blocks. The BIST circuit in conjunction with the BISoR is configured to test and soft repair the first memory block before performing test and soft repair of the second memory block.
Abstract translation: 内置自检(BIST)电路,用于测试集成电路上的一个或多个存储器块。 一个或多个存储器块还包括第一存储器块和第二存储器块A,内置软修复控制器(BISoR)被提供以软修复一个或多个存储器块。 配置BISoR的BIST电路配置为在执行第二个内存块的测试和软修复之前测试和软修复第一个内存块。
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2.
公开(公告)号:US20140189450A1
公开(公告)日:2014-07-03
申请号:US14108489
申请日:2013-12-17
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Devanathan Varadarajan , Raghavendra Prasad KS , Harsharaj Ellur
IPC: G11C29/12
CPC classification number: G11C29/4401 , G11C29/785 , G11C2029/0409 , G11C2029/4402
Abstract: A built-in self-test (BIST) circuit to test one or more memory blocks on an integrated circuit. The one or more memory blocks further includes a first memory block and a second memory block A built-in soft-repair controller (BISoR) is provided to soft repair the one or more memory blocks. The BIST circuit in conjunction with the BISoR is configured to test and soft repair the first memory block before performing test and soft repair of the second memory block.
Abstract translation: 内置自检(BIST)电路,用于测试集成电路上的一个或多个存储器块。 一个或多个存储器块还包括第一存储器块和第二存储器块A,提供内置的软修复控制器(BISoR)来软件修复所述一个或多个存储器块。 配置BISoR的BIST电路配置为在执行第二个内存块的测试和软修复之前测试和软修复第一个内存块。
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