公开(公告)号：US09335223B2

公开(公告)日：2016-05-10

申请号：US13866301

申请日：2013-04-19

Applicant: Texas Instruments Incorporated

Inventor： Mikel K. Ash ,  Krishnaswamy Nagaraj ,  Paul Kimelman ,  Steve Vu

IPC: G01K7/01 ,  G01K7/16

CPC classification number: G01K7/01

Abstract: Methods and circuits for measuring the temperature of a transistor are disclosed. An embodiment of the method includes, providing a current into a circuit, wherein the circuit is connected to the transistor. A variable resistance is connected between the base and collector of the transistor. The circuit has a first mode and a second mode, wherein the current in the first mode flows into the base of the transistor and through the resistance and the current in the second mode flows into the emitter of the transistor. Voltages in both the first mode and the second mode are measured using different resistance settings. The temperature of the transistor is calculated based on the difference between the different voltages.

Abstract translation: 公开了用于测量晶体管的温度的方法和电路。 该方法的实施例包括：向电路提供电流，其中电路连接到晶体管。 可变电阻连接在晶体管的基极和集电极之间。 电路具有第一模式和第二模式，其中第一模式中的电流流入晶体管的基极并通过电阻，并且第二模式中的电流流入晶体管的发射极。 使用不同的电阻设置来测量第一模式和第二模式中的电压。 基于不同电压之间的差值来计算晶体管的温度。

公开(公告)号：US20140314124A1

公开(公告)日：2014-10-23

申请号：US13866301

申请日：2013-04-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Mikel K. Ash ,  Krishnaswamy Nagaraj ,  Paul Kimelman ,  Steve Vu

IPC: G01K7/18

CPC classification number: G01K7/01

Abstract: Methods and circuits for measuring the temperature of a transistor are disclosed. An embodiment of the method includes, providing a current into a circuit, wherein the circuit is connected to the transistor. A variable resistance is connected between the base and collector of the transistor. The circuit has a first mode and a second mode, wherein the current in the first mode flows into the base of the transistor and through the resistance and the current in the second mode flows into the emitter of the transistor. Voltages in both the first mode and the second mode are measured using different resistance settings. The temperature of the transistor is calculated based on the difference between the different voltages.

Abstract translation: 公开了用于测量晶体管的温度的方法和电路。 该方法的实施例包括：向电路提供电流，其中电路连接到晶体管。 可变电阻连接在晶体管的基极和集电极之间。 电路具有第一模式和第二模式，其中第一模式中的电流流入晶体管的基极并通过电阻，并且第二模式中的电流流入晶体管的发射极。 使用不同的电阻设置来测量第一模式和第二模式中的电压。 基于不同电压之间的差值来计算晶体管的温度。