公开(公告)号：US11368150B2

公开(公告)日：2022-06-21

申请号：US16555482

申请日：2019-08-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Gangyao Wang ,  Xiong Li ,  Suxuan Guo

IPC: H03K17/18 ,  H03K17/687

Abstract: A device includes an output circuit configured to drive a gate of a field effect transistor (FET) in response to a drive signal. The FET includes a body diode. Control logic is configured to generate the drive signal to control the output circuit to drive the FET. A measurement circuit is configured to sample a first voltage across the FET in response to a first state of the drive signal and configured to sample a second voltage across the FET in response to a second state of the drive signal. The second state of the drive signal is different from the first state. The control logic is configured to determine a difference between the first voltage and a reference voltage. The control logic is configured to compare the difference to a degradation threshold to determine a level of degradation of the FET. The reference voltage is determined based on the second voltage.