Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes
    1.
    发明申请
    Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes 有权
    离子束修饰薄膜多晶硅膜中的残余应力梯度

    公开(公告)号:US20020155635A1

    公开(公告)日:2002-10-24

    申请号:US10175977

    申请日:2002-06-20

    Inventor: Thomas G. Bifano

    Abstract: Method and apparatus for reducing the curvature of a micromachined structure having lamella (12). Surface treatment by an ion beam (30) of the lamella (12) such as by sputtering removes regions of stress allowing the lamella (12) to return to a planar condition. The resulting outer surface is made suitable for use as a reflector and other purposes needing a substantially planar surface.

    Abstract translation: 用于减小具有薄片(12)的微加工结构的曲率的方法和装置。 通过薄片(12)的离子束(30)进行表面处理,例如通过溅射去除使得薄片(12)返回到平面状态的应力区域。 所得的外表面适于用作反射器和需要基本平坦的表面的其它目的。

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