公开(公告)号：US20230395400A1

公开(公告)日：2023-12-07

申请号：US18451826

申请日：2023-08-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshiki IGARASHI ,  Satoru KIKUSHIMA ,  Takayuki SUGA ,  Jun LIN ,  Chengya CHU

IPC: H01L21/67

CPC classification number: H01L21/67069 ,  H01L21/31116

Abstract: An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and heating and removing a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.

公开(公告)号：US20210358772A1

公开(公告)日：2021-11-18

申请号：US17319514

申请日：2021-05-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshiki IGARASHI ,  Satoru KIKUSHIMA ,  Takayuki SUGA ,  Jun LIN ,  Chengya CHU

IPC: H01L21/67

Abstract: An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and heating and removing a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.