公开(公告)号：US20090207267A1

公开(公告)日：2009-08-20

申请号：US12364915

申请日：2009-02-03

Applicant: Tadao INOUE ,  Hiroshi DAIKU

Inventor： Tadao INOUE ,  Hiroshi DAIKU

IPC: H04N5/228 ,  H04N5/225 ,  H04N5/335

CPC classification number: H01L27/14603 ,  H01L27/14627 ,  H01L27/14685

Abstract: A method for calculating a shift amount of a microlens from a position of a light receiving element arranged in a pixel of an image pickup element is provided. The microlens collects incident light from an image pickup lens. The method comprises: acquiring an incident angle characteristic value indicating a relation between an arranged position of the pixel and an incident angle of the incident light to the pixel; calculating a sampled shift amount of the microlens from the position of the light receiving element corresponding the incident angle characteristic value based on light collection efficiency of the incident light; approximating the sampled shift amount by a second or higher order function to calculate a shift amount characteristic function indicating a relation between the arranged position and the shift amount; and calculating the shift amount of the pixel using the shift amount characteristic function.

Abstract translation: 提供了一种用于从布置在图像拾取元件的像素中的光接收元件的位置计算微透镜的偏移量的方法。 微透镜收集来自图像拾取透镜的入射光。 该方法包括：获取指示像素的布置位置与入射光与像素的入射角之间的关系的入射角特性值; 根据入射角特性值，根据入射光的光收集效率，从受光元件的位置计算微透镜的采样偏移量; 通过第二或更高阶函数近似所述采样偏移量，以计算指示所述布置位置与所述偏移量之间的关系的偏移量特征函数; 以及使用偏移量特征函数来计算像素的偏移量。

公开(公告)号：US20080001192A1

公开(公告)日：2008-01-03

申请号：US11852663

申请日：2007-09-10

Applicant: Tadao INOUE ,  Katsuyoshi YAMAMOTO ,  Narumi OHKAWA

Inventor： Tadao INOUE ,  Katsuyoshi YAMAMOTO ,  Narumi OHKAWA

IPC: H01L31/113 ,  H01L31/062

CPC classification number: H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14652 ,  H01L27/14689

Abstract: A CMOS image sensor with an effectively increased aperture ratio and moreover with improved optical sensitivity, and a method of manufacture of such a CMOS image sensor is provided a first aspect of the invention is an image sensor, has a pixel region 10 in which are formed a plurality of pixels each having at least a photodiode, a reset transistor, and a source-follower transistor; and a peripheral circuit region 12 in which are formed peripheral circuits which process read-out signals read out from the pixel region, a well region PW2 in the pixel region PW1 is formed to be more shallow than a well region in the peripheral circuit region. Also, reset transistors or source-follower transistors are formed in the shallow well region PW2 of the pixel region 10, and a photodiode region PHD2 is embedded below the transistor well region PW2.

Abstract translation: 提供了一种具有有效提高孔径比并且还具有改善的光学灵敏度的CMOS图像传感器以及这种CMOS图像传感器的制造方法本发明的第一方面是一种图像传感器，其具有形成有像素区域10 每个具有至少一个光电二极管，复位晶体管和源极 - 跟随器晶体管的多个像素; 以及外围电路区域12，其形成有处理从像素区域读出的读出信号的外围电路，像素区域PW1中的阱区域PW2形成为比外围电路中的阱区域浅 地区。 此外，在像素区域10的浅阱区PW2中形成复位晶体管或源极跟随器晶体管，并且将光电二极管区域PHD 2嵌入晶体管阱区PW2的下方。

公开(公告)号：US20110210383A1

公开(公告)日：2011-09-01

申请号：US13104673

申请日：2011-05-10

Applicant: Tadao INOUE ,  Katsuyoshi YAMAMOTO ,  Hiroshi KOBAYASHI

Inventor： Tadao INOUE ,  Katsuyoshi YAMAMOTO ,  Hiroshi KOBAYASHI

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14645 ,  H01L31/03529 ,  H04N5/361 ,  Y02E10/50

Abstract: First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region to cover a peripheral part of the first diffusion region. In the peripheral part of the first diffusion region, crystal defects tend to occur by a process of forming an isolation region and a gate electrode, so that dark current noise tends to occur. The second diffusion region functioning as a protection layer prevents crystal defects in a manufacturing process. The second diffusion region isn't formed on a center of the surface of the first diffusion region where crystal defects don't tend to occur. In the first diffusion region where the second diffusion region isn't formed, the thickness of a depletion layer increases, which improves light detection sensitivity. This improves detection sensitivity of the photodiode without increasing the dark current noise.

Abstract translation: 在每个像素中构成光电二极管的第一扩散区域存储根据入射光生成的载流子。 第二扩散区域形成在第一扩散区域的表面以覆盖第一扩散区域的周边部分。 在第一扩散区域的外围部分中，通过形成隔离区域和栅极电极的过程倾向于发生晶体缺陷，从而趋于产生暗电流噪声。 用作保护层的第二扩散区防止制造过程中的晶体缺陷。 第二扩散区域不形成在不易发生结晶缺陷的第一扩散区域的表面的中心。 在没有形成第二扩散区域的第一扩散区域中，耗尽层的厚度增加，这提高了光检测灵敏度。 这可以提高光电二极管的检测灵敏度，而不会增加暗电流噪声。

公开(公告)号：US20080296643A1

公开(公告)日：2008-12-04

申请号：US12130280

申请日：2008-05-30

Applicant: Tadao INOUE ,  Hiroshi DAIKU

Inventor： Tadao INOUE ,  Hiroshi DAIKU

IPC: H01L31/00

CPC classification number: H01L27/14627 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14643

Abstract: A solid state image sensing device in which many pixels are disposed in a matrix on a two-dimensional plane comprises a plurality of light receiving devices disposed in such a way that a center interval may periodically change in a column direction and/or a row direction, and a plurality of micro-lenses, for collecting an incident light of each light receiving device, wherein a center interval periodically changes in accordance with the periodic change of the center interval of the light receiving device.

Abstract translation: 其中许多像素被布置在二维平面上的矩阵中的固态图像感测装置包括多个光接收装置，其以这样的方式设置，使得中心间隔可以在列方向和/或行方向上周期性地变化 以及多个微透镜，用于收集每个光接收装置的入射光，其中中心间隔根据光接收装置的中心间隔的周期性变化周期性地变化。

公开(公告)号：US20080029788A1

公开(公告)日：2008-02-07

申请号：US11861691

申请日：2007-09-26

Applicant: Tadao INOUE ,  Katsuyoshi YAMAMOTO ,  Hiroshi KOBAYASHI

Inventor： Tadao INOUE ,  Katsuyoshi YAMAMOTO ,  Hiroshi KOBAYASHI

IPC: H01L27/148

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14645 ,  H01L31/03529 ,  H04N5/361 ,  Y02E10/50

Abstract: First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region to cover a peripheral part of the first diffusion region. In the peripheral part of the first diffusion region, crystal defects tend to occur by a process of forming an isolation region and a gate electrode, so that dark current noise tends to occur. The second diffusion region functioning as a protection layer prevents crystal defects in a manufacturing process. The second diffusion region isn't formed on a center of the surface of the first diffusion region where crystal defects don't tend to occur. In the first diffusion region where the second diffusion region isn't formed, the thickness of a depletion layer increases, which improves light detection sensitivity. This improves detection sensitivity of the photodiode without increasing the dark current noise.

Abstract translation: 在每个像素中构成光电二极管的第一扩散区域存储根据入射光生成的载流子。 第二扩散区域形成在第一扩散区域的表面以覆盖第一扩散区域的周边部分。 在第一扩散区域的外围部分中，通过形成隔离区域和栅极电极的过程倾向于发生晶体缺陷，从而趋于产生暗电流噪声。 用作保护层的第二扩散区防止制造过程中的晶体缺陷。 第二扩散区域不形成在不易发生结晶缺陷的第一扩散区域的表面的中心。 在没有形成第二扩散区域的第一扩散区域中，耗尽层的厚度增加，这提高了光检测灵敏度。 这可以提高光电二极管的检测灵敏度，而不会增加暗电流噪声。

公开(公告)号：US20120262611A1

公开(公告)日：2012-10-18

申请号：US13524966

申请日：2012-06-15

Applicant: Tadao INOUE ,  Hiroshi DAIKU

Inventor： Tadao INOUE ,  Hiroshi DAIKU

IPC: H04N9/04

CPC classification number: H01L27/14603 ,  H01L27/14627 ,  H01L27/14685

Abstract: A method for calculating a shift amount of a microlens from a position of a light receiving element arranged in a pixel of an image pickup element is provided. The microlens collects incident light from an image pickup lens. The method comprises: acquiring an incident angle characteristic value indicating a relation between an arranged position of the pixel and an incident angle of the incident light to the pixel; calculating a sampled shift amount of the microlens from the position of the light receiving element corresponding the incident angle characteristic value based on light collection efficiency of the incident light; approximating the sampled shift amount by a second or higher order function to calculate a shift amount characteristic function indicating a relation between the arranged position and the shift amount; and calculating the shift amount of the pixel using the shift amount characteristic function.

Abstract translation: 提供了一种用于从布置在图像拾取元件的像素中的光接收元件的位置计算微透镜的偏移量的方法。 微透镜收集来自图像拾取透镜的入射光。 该方法包括：获取指示像素的布置位置与入射光与像素的入射角之间的关系的入射角特性值; 根据入射角特性值，根据入射光的光收集效率，从受光元件的位置计算微透镜的采样偏移量; 通过第二或更高阶函数近似所述采样偏移量，以计算指示所述布置位置与所述偏移量之间的关系的偏移量特征函数; 以及使用偏移量特征函数来计算像素的偏移量。

公开(公告)号：US20090304397A1

公开(公告)日：2009-12-10

申请号：US12540855

申请日：2009-08-13

Applicant: Tadao INOUE

Inventor： Tadao INOUE

IPC: H04B10/06

CPC classification number: H01L27/1446 ,  H01L27/14625 ,  H01L27/14627

Abstract: The light receiving device includes a pixel array, such as a two-dimensional pixel array, of pixels each having a light-receiving element for receiving input signal light, an output selecting unit for selecting the outputs of pixels within the pixel array, a selected output adding unit for adding and outputting the selected outputs of the pixels, and an amplifying unit for amplifying the output of the selected output adding unit.

Abstract translation: 光接收装置包括每个具有用于接收输入信号光的光接收元件的像素的二维像素阵列的像素阵列，用于选择像素阵列内的像素的输出的输出选择单元，所选择的 输出加法单元，用于相加和输出所选择的像素的输出;以及放大单元，用于放大所选输出加法单元的输出。