公开(公告)号：US11563001B2

公开(公告)日：2023-01-24

申请号：US17006167

申请日：2020-08-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lin-Yu Huang ,  Chiao-Hao Chang ,  Cheng-Chi Chuang ,  Chih-Hao Wang ,  Ching-Wei Tsai ,  Kuan-Lun Cheng

IPC: H01L27/088 ,  H01L29/66 ,  H01L29/423

Abstract: A semiconductor device with air spacers and air caps and a method of fabricating the same are disclosed. The semiconductor device includes a substrate and a fin structure disposed on the substrate. The fin structure includes a first fin portion and a second fin portion. The semiconductor device further includes a source/drain (S/D) region disposed on the first fin portion, a contact structure disposed on the S/D region, a gate structure disposed on the second fin portion, an air spacer disposed between a sidewall of the gate structure and the contact structure, a cap seal disposed on the gate structure, and an air cap disposed between a top surface of the gate structure and the cap seal.

公开(公告)号：US20210305246A1

公开(公告)日：2021-09-30

申请号：US17006167

申请日：2020-08-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lin-Yu HUANG ,  Chiao-Hao Chang ,  Cheng-Chi Chuang ,  Chih-Hao Wang ,  Ching-Wei Tsai ,  Kuan-Lun Cheng

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device with air spacers and air caps and a method of fabricating the same are disclosed. The semiconductor device includes a substrate and a fin structure disposed on the substrate. The fin structure includes a first fin portion and a second fin portion. The semiconductor device further includes a source/drain (S/D) region disposed on the first fin portion, a contact structure disposed on the S/D region, a gate structure disposed on the second fin portion, an air spacer disposed between a sidewall of the gate structure and the contact structure, a cap seal disposed on the gate structure, and an air cap disposed between a top surface of the gate structure and the cap seal.