公开(公告)号：US20200006639A1

公开(公告)日：2020-01-02

申请号：US16210226

申请日：2018-12-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung-Tang WU ,  Jui-Hung HO ,  Chin-Szu LEE ,  Meng-Yu WU ,  Szu-Hua WU

IPC: H01L43/02 ,  H01L23/532 ,  H01L43/12 ,  H01L21/768

Abstract: The present disclosure describes an exemplary method that can prevent or reduce out-diffusion of Cu from interconnect layers to magnetic tunnel junction (MTJ) structures. The method includes forming an interconnect layer over a substrate that includes an interlayer dielectric stack with openings therein; disposing a metal in the openings to form corresponding conductive structures; and selectively depositing a diffusion barrier layer on the metal. In the method, selectively depositing the diffusion barrier layer includes pre-treating the surface of the metal; disposing a precursor to selectively form a partially-decomposed precursor layer on the metal; and exposing the partially-decomposed precursor layer to a plasma to form the diffusion barrier layer. The method further includes forming an MTJ structure on the interconnect layer over the diffusion barrier layer, where the bottom electrode of the MTJ structure is aligned to the diffusion barrier layer.

公开(公告)号：US20210288249A1

公开(公告)日：2021-09-16

申请号：US17334536

申请日：2021-05-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung-Tang WU ,  Jui-Hung HO ,  Chin-Szu LEE ,  Meng-Yu WU ,  Szu-Hua WU

IPC: H01L45/00 ,  H01L43/02 ,  H01L21/768 ,  H01L43/12 ,  H01L23/532

Abstract: The present disclosure describes an exemplary method that can prevent or reduce out-diffusion of Cu from interconnect layers to magnetic tunnel junction (MTJ) structures. The method includes forming an interconnect layer over a substrate that includes an interlayer dielectric stack with openings therein; disposing a metal in the openings to form corresponding conductive structures; and selectively depositing a diffusion barrier layer on the metal. In the method, selectively depositing the diffusion barrier layer includes pre-treating the surface of the metal; disposing a precursor to selectively form a partially-decomposed precursor layer on the metal; and exposing the partially-decomposed precursor layer to a plasma to form the diffusion barrier layer. The method further includes forming an MTJ structure on the interconnect layer over the diffusion barrier layer, where the bottom electrode of the MTJ structure is aligned to the diffusion barrier layer.