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公开(公告)号：US11156772B2
公开(公告)日：2021-10-26
申请号：US16995145
申请日：2020-08-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chen-Hua Yu , Hsing-Kuo Hsia , Kuo-Chiang Ting , Pin-Tso Lin , Sung-Hui Huang , Shang-Yun Hou , Chi-Hsi Wu
Abstract: A method includes forming silicon waveguide sections in a first oxide layer over a substrate, the first oxide layer disposed on the substrate, forming a routing structure over the first oxide layer, the routing structure including one or more insulating layers and one or more conductive features in the one or more insulating layers, recessing regions of the routing structure, forming nitride waveguide sections in the recessed regions of the routing structure, wherein the nitride waveguide sections extend over the silicon waveguide sections, forming a second oxide layer over the nitride waveguide sections, and attaching semiconductor dies to the routing structure, the dies electrically connected to the conductive features.
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公开(公告)号：US20210018678A1
公开(公告)日：2021-01-21
申请号：US16995145
申请日：2020-08-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chen-Hua Yu , Hsing-Kuo Hsia , Kuo-Chiang Ting , Pin-Tso Lin , Sung-Hui Huang , Shang-Yun Hou , Chi-Hsi Wu
Abstract: A method includes forming silicon waveguide sections in a first oxide layer over a substrate, the first oxide layer disposed on the substrate, forming a routing structure over the first oxide layer, the routing structure including one or more insulating layers and one or more conductive features in the one or more insulating layers, recessing regions of the routing structure, forming nitride waveguide sections in the recessed regions of the routing structure, wherein the nitride waveguide sections extend over the silicon waveguide sections, forming a second oxide layer over the nitride waveguide sections, and attaching semiconductor dies to the routing structure, the dies electrically connected to the conductive features.
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