公开(公告)号：US10923881B2

公开(公告)日：2021-02-16

申请号：US16622172

申请日：2018-08-27

Applicant: Taiyuan University Of Technology

Inventor： Mingjiang Zhang ,  Jianzhong Zhang ,  Tianshuang Lv ,  Lijun Qiao ,  Yi Liu ,  Tong Zhao ,  Anbang Wang ,  Yuncai Wang

IPC: H01S5/30 ,  H01S5/042 ,  H01S5/10 ,  H01S5/20 ,  H01S5/34 ,  H01S5/22 ,  H01S3/067 ,  H01S5/12

Abstract: A monolithic integrated semiconductor random laser comprising substrate, lower confinement layer on the substrate, active layer on the lower confinement layer, upper confinement layer on the active layer, strip-shaped waveguide layer longitudinally made in middle of the upper confinement layer, P+ electrode layer divided into two segments and made on the waveguide layer and N+ electrode layer on a back face of the lower confinement layer, wherein the two segments correspond respectively to gain region and random feedback region. The random feedback region uses a doped waveguide to randomly feedback light emitted by the gain region and then generates random laser which is random in frequency and intensity. Further, the semiconductor laser is light, small, stable in performance and strong in integration.

公开(公告)号：US11152763B2

公开(公告)日：2021-10-19

申请号：US16622061

申请日：2018-08-27

Applicant: Taiyuan University Of Technology

Inventor： Mingjiang Zhang ,  Jianzhong Zhang ,  Ya'nan Niu ,  Yi Liu ,  Tong Zhao ,  Lijun Qiao ,  Anbang Wang ,  Yuncai Wang

IPC: H01S5/12 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/343 ,  H01S5/40

Abstract: An InP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light, being composed of six regions: a left DFB semiconductor laser, a bidirectional SOA, a left passive optical waveguide region, a doped passive optical waveguide region, a right passive optical waveguide region, and a right DFB semiconductor laser, specifically including: an N+ electrode layer, an N-type substrate, an InGaAsP lower confinement layer, an undoped InGaAsP multiple quantum well active region layer, doped particles, distributed feedback Bragg gratings, an InGaAsP upper confinement layer, a P-type heavily doped InP cover layer, a P-type heavily doped InGaAs contact layer, a P+ electrode layer, a light-emitting region, and isolation grooves. It effectively solves problems of bulky volume of the existing chaotic laser source, the time-delay signature of chaotic laser, narrow bandwidth, and low coupling efficiency of the light and the optical waveguide.