公开(公告)号：US10923881B2

公开(公告)日：2021-02-16

申请号：US16622172

申请日：2018-08-27

Applicant: Taiyuan University Of Technology

Inventor： Mingjiang Zhang ,  Jianzhong Zhang ,  Tianshuang Lv ,  Lijun Qiao ,  Yi Liu ,  Tong Zhao ,  Anbang Wang ,  Yuncai Wang

IPC: H01S5/30 ,  H01S5/042 ,  H01S5/10 ,  H01S5/20 ,  H01S5/34 ,  H01S5/22 ,  H01S3/067 ,  H01S5/12

Abstract: A monolithic integrated semiconductor random laser comprising substrate, lower confinement layer on the substrate, active layer on the lower confinement layer, upper confinement layer on the active layer, strip-shaped waveguide layer longitudinally made in middle of the upper confinement layer, P+ electrode layer divided into two segments and made on the waveguide layer and N+ electrode layer on a back face of the lower confinement layer, wherein the two segments correspond respectively to gain region and random feedback region. The random feedback region uses a doped waveguide to randomly feedback light emitted by the gain region and then generates random laser which is random in frequency and intensity. Further, the semiconductor laser is light, small, stable in performance and strong in integration.