公开(公告)号：US12027612B2

公开(公告)日：2024-07-02

申请号：US17340255

申请日：2021-06-07

Applicant: Texas Instruments Incorporated

Inventor： Karmel Kranthi Nagothu ,  James Paul Di Sarro ,  Rajkumar Sankaralingam

IPC: H01L29/08 ,  H01L27/02 ,  H01L29/74

CPC classification number: H01L29/74 ,  H01L27/0262 ,  H01L29/0834 ,  H01L29/0839

Abstract: A lateral semiconductor controlled rectifier (SCR) includes a pwell and an nwell A plurality of p+ contact regions connect to the pwell and are spaced apart from one another by a dielectric material along a width of the pwell. There are a plurality of n+ contact regions connect to the nwell and are spaced apart from one another by dielectric material along a width of the nwell.

公开(公告)号：US20220223723A1

公开(公告)日：2022-07-14

申请号：US17340255

申请日：2021-06-07

Applicant: Texas Instruments Incorporated

Inventor： Karmel Kranthi Nagothu ,  James Paul Di Sarro ,  Rajkumar Sankaralingam

IPC: H01L29/74 ,  H01L27/02 ,  H01L29/08

Abstract: A lateral semiconductor controlled rectifier (SCR) includes a pwell and an nwell A plurality of p+ contact regions connect to the pwell and are spaced apart from one another by a dielectric material along a width of the pwell. There are a plurality of n+ contact regions connect to the nwell and are spaced apart from one another by dielectric material along a width of the nwell.