Bi.sub.4 Ti.sub.3 O.sub.12 Single crystal growth from saturated seeded
solution
    1.
    发明授权
    Bi.sub.4 Ti.sub.3 O.sub.12 Single crystal growth from saturated seeded solution 失效
    BI'4'TI'3'O'12'单晶生长从饱和的种子溶液

    公开(公告)号:US3962027A

    公开(公告)日:1976-06-08

    申请号:US504311

    申请日:1974-09-09

    CPC classification number: C30B17/00 C30B15/00 C30B29/32 C30B9/00

    Abstract: Method of growing single crystal of Bi.sub.4 Ti.sub.3 O.sub.12 by a top-seeded growth technique. A solution of TiO.sub.2 is a solvent consisting of Bi.sub.2 O.sub.3 with/without B.sub.2 O.sub.3 is prepared. The temperature of the solution is adjusted to a value which is not more than 5.degree.C above the saturation temperature of the solution, and is maintained at this value while the degree of saturation of the solution is increased by dissolving TiO.sub.2. A Bi.sub.4 Ti.sub.3 O.sub.12 seed crystal is then lowered into the solution which is gradually cooled so as to grow a single crystal. The transparency of crystals grown from a solution containing B.sub.2 O.sub.3 in addition to Bi.sub.2 O.sub.3 is better than that of crystals grown from solutions in which the solvent consists solely of Bi.sub.2 O.sub.3.

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