公开(公告)号：US4231838A

公开(公告)日：1980-11-04

申请号：US898444

申请日：1978-04-20

Applicant: Thurman E. Gier

Inventor： Thurman E. Gier

IPC: C01G23/00 ,  C01B25/37 ,  C01B25/45 ,  C01G28/00 ,  C30B9/00 ,  C30B9/02 ,  C30B9/04 ,  C30B11/00 ,  C30B15/00 ,  C30B29/14 ,  G02B1/02 ,  B01J17/04 ,  B01J17/20

CPC classification number: C30B29/22 ,  C01B25/37 ,  C01B25/45 ,  C30B11/00 ,  C30B15/00 ,  C30B9/00

Abstract: A process for the manufacture of single crystals of MTiOXO.sub.4, wherein M is K, Rb or Tl and X is P or As, of optical quality and of sufficient size for use in nonlinear optical devices. In the process, starting ingredients chosen to be within the region of the ternary phase diagram in which the desired crystal MTiOXO.sub.4 product is the only stable solid phase, are heated to produce MTiOXO.sub.4 and then controllably cooled to crystallize the desired product. In a preferred method the ingredients are placed in a temperature gradient in which the hot zone ranges from about 800.degree.-1000.degree. C. and the cold zone about 10.degree.-135.degree. C. cooler, maintaining the temperature gradient for about 3 days to about 3 weeks, cooling, and recovering MTiOXO.sub.4 crystals.

Abstract translation: 制造MTiOXO4的单晶的方法，其中M是K，Rb或T1，X是P或As，具有光学质量并且足够用于非线性光学器件的尺寸。 在此过程中，加热选择在所需晶体MTiOXO4产物是唯一稳定的固相的三元相图区域内的起始成分，以产生MTiOXO4，然后可控地冷却以使所需产物结晶。 在优选的方法中，将成分置于温度梯度中，其中热区的范围为约800-1000℃，冷区为约10-113℃，冷却器，保持温度梯度约3天至 约3周，冷却并回收MTiOXO4晶体。

公开(公告)号：US4200484A

公开(公告)日：1980-04-29

申请号：US831033

申请日：1977-09-06

Applicant: Howard L. Glass

Inventor： Howard L. Glass

IPC: C30B19/02 ,  C30B19/06 ,  C30B19/12 ,  B01J17/04

CPC classification number: C30B19/12 ,  C30B19/02 ,  C30B19/068 ,  C30B29/28

Abstract: A pair of substrates is mounted with first faces thereof directed away from each other and second faces thereof in sealing contact with each other. The substrates are then immersed in a first molten flux for depositing a film of a first material on the first faces of each of the substrates by liquid phase epitaxy (LPE). During the immersion in the first molten flux, the second faces of the substrates, being clamped against each other, seal each other from contact with the flux. After removal from the first flux, the pair of substrates is mounted with the films on the first faces thereof in sealing contact with each other. The substrates are then immersed in a second molten flux for depositing a film of a second material on the second faces of each of the substrates by LPE. The second material is, typically, different from the first material. During the immersion in the second molten flux, the films on the first faces of the substrates, being clamped against each other, seal each other from contact with the flux.

Abstract translation: 安装一对基板，其第一面彼此远离并彼此密封接触。 然后将衬底浸入第一熔融助熔剂中，以通过液相外延（LPE）在每个衬底的第一面上沉积第一材料的膜。 在浸入第一熔融焊剂期间，彼此夹紧的基板的第二面彼此密封，不与焊剂接触。 在从第一通量去除之后，一对基板被安装在其第一面上的膜彼此密封接触。 然后将衬底浸入第二熔融焊剂中，以通过LPE在每个衬底的第二面上沉积第二材料的膜。 第二种材料通常不同于第一种材料。 在浸入第二熔融焊剂中时，彼此夹紧的基板的第一面上的膜彼此密封，不与焊剂接触。

公开(公告)号：US4186045A

公开(公告)日：1980-01-29

申请号：US846651

申请日：1977-10-28

Applicant: Harry C. Gatos ,  Lubomir L. Jastrzebski

Inventor： Harry C. Gatos ,  Lubomir L. Jastrzebski

IPC: C30B19/10 ,  B01J17/04

CPC classification number: C30B19/103

Abstract: A method of liquid phase epitaxial (LPE) growth of, for example, a semiconductor material or an oxide material whereby growth upon a seed in a seed-solution system is affected by passing electric current in an appropriate direction to effect migration of the materials to the growth interface or away from the interface and then cause deposition of desired materials upon said growth interface.

Abstract translation: 例如，半导体材料或氧化物材料的液相外延（LPE）生长的方法，由此在种子溶液系统中的种子上的生长受到沿适当方向的通过电流的影响，以使材料迁移到 生长界面或远离界面，然后在所述生长界面上引起所需材料的沉积。

公开(公告)号：US4021294A

公开(公告)日：1977-05-03

申请号：US678744

申请日：1976-04-21

Applicant: Valentin Evstafievich Khadzhi ,  Evgeny Matveevich Tsyganov ,  Leonid Iosifovich Tsinober ,  Zhanneta Viktorovna Novozhilova ,  Galina Vasilievna Reshetova ,  Mikhail Isaakovich Samoilovich ,  Vladimir Petrovich Butuzov ,  Anatoly Alexandrovich Shaposhnikov ,  Margarita Vladimirovna Lelekova

Inventor： Valentin Evstafievich Khadzhi ,  Evgeny Matveevich Tsyganov ,  Leonid Iosifovich Tsinober ,  Zhanneta Viktorovna Novozhilova ,  Galina Vasilievna Reshetova ,  Mikhail Isaakovich Samoilovich ,  Vladimir Petrovich Butuzov ,  Anatoly Alexandrovich Shaposhnikov ,  Margarita Vladimirovna Lelekova

IPC: C30B7/00 ,  B01J17/04 ,  C01B33/12

CPC classification number: C30B7/00 ,  C30B29/18 ,  Y10S117/902 ,  Y10S117/905

Abstract: A process for producing amethyst crystals involving growing of colorless quartz crystals by a hydrothermal method of a temperature drop in a high-pressure autoclave on crystalline quartz seed plates oriented parallel to the crystallographic planes of the major {1011} and minor {1101} rhombohedrons using crystalline quartz as a charge. Said growing is effected from aqueous solutions of potassium carbonate or potassium hydroxide having a concentration ranging from 4 to 7 wt.% and containing iron introduced into the autoclave in the form of metallic iron or in the form of its oxydic or hydroxydic compounds in an amount ranging from 5 to 30 g/l of the solution. The growing process is effected at a crystallization temperature within the range of from 300.degree. to 500.degree. C. under a pressure ranging from 200 to 1,700 kg/cm.sup.2 and a crystal growth rate of from 0.05 to 0.5 mm/day. It is advisable to introduce into the autoclave, prior to the crystal growing, lithium nitrite or lithium nitrate or manganese nitrate in an amount ranging from 1 to 10 g/l of the solution. The thus-grown colorless quartz crystals are exposed to an ionizing irridation. The process for growing crystals according to the present invention is well-reproducible, since it is performed at specfied physico-chemical parameters. The process of the present invention enables the production of amethyst crystals with a high color purity and a high transparency (i.e., with no cracks).

Abstract translation: 一种生产紫水晶的方法，涉及通过在高压高压釜中的温度降低的水热法生长无色石英晶体，晶体石英晶种板平行于主要{1011}和次要{1101}菱面体的晶面取向，使用 晶体石英作为电荷。 所述生长由浓度范围为4至7重量％的碳酸钾或氢氧化钾的水溶液进行，并且含有以金属铁的形式引入高压釜中的铁或其氧化或羟基化合物形式的量 范围为5至30g / l的溶液。 生长过程在300至500℃范围内的结晶温度下在200至1700kg / cm2的压力和0.05-0.5mm /天的晶体生长速率下进行。 建议在晶体生长之前将高压釜引入量为1至10g / l溶液的亚硝酸锂或硝酸锂或硝酸锰。 将如此生长的无色石英晶体暴露于电离刺激。 根据本发明的用于生长晶体的方法是可重现的，因为它在特定的物理化学参数下进行。 本发明的方法能够生产具有高色纯度和高透明度（即没有裂纹）的紫晶晶体。

公开(公告)号：US4013501A

公开(公告)日：1977-03-22

申请号：US690613

申请日：1976-05-27

Applicant: Le Grand Gerard Van Uitert ,  George John Zydzik

Inventor： Le Grand Gerard Van Uitert ,  George John Zydzik

IPC: C30B9/00 ,  B01J17/04 ,  C01F17/00

CPC classification number: C30B9/00 ,  C30B29/28

Abstract: A method is disclosed for growing neodymium doped yttrium aluminum garnet crystals from a melt containing constituent oxides, lead oxide, lead fluoride, and boron trioxide. By subjecting the melt to a controlled temperature cycle while maintaining a temperature gradient in the melt, large size, high quality crystals are obtained. Crystals produced by the disclosed method are suited for laser application.

Abstract translation: 公开了一种从含有组分氧化物，氧化铅，氟化铅和三氧化硼的熔体中生长钕掺杂的钇铝石榴石晶体的方法。 通过在保持熔体中的温度梯度的同时对熔体进行受控温度循环，获得大尺寸，高质量的晶体。 通过公开的方法生产的晶体适用于激光应用。

公开(公告)号：US3452549A

公开(公告)日：1969-07-01

申请号：US3452549D

申请日：1966-03-28

Applicant: US ARMY

Inventor： CAMP PAUL R

IPC: C30B7/00 ,  B01J17/20 ,  B01J17/04

CPC classification number: C30B7/00 ,  C30B29/02

公开(公告)号：US3440024A

公开(公告)日：1969-04-22

申请号：US3440024D

申请日：1966-10-19

Applicant: OLIN MATHIESON

Inventor： FAUST JOHN P ,  ROBSON HOMER L

IPC: C01B11/06 ,  B01J17/04

CPC classification number: C01B11/064

公开(公告)号：US4350561A

公开(公告)日：1982-09-21

申请号：US150331

申请日：1980-05-16

Applicant: Roger G. Little

Inventor： Roger G. Little

IPC: C30B11/00 ,  H01L31/0236 ,  B01J17/04

CPC classification number: H01L31/0236 ,  C30B11/00 ,  C30B11/002 ,  C30B11/005 ,  C30B29/60 ,  Y02E10/50 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S117/913 ,  Y10S148/135 ,  Y10S438/964

Abstract: The surface of a starting single crystal of specified composition (e.g., silicon) is etched to produce a relief texture; a stratum of release composition (e.g., aluminum) is deposited on the relief texture to acquire a replica texture and is released to provide a replica master; a replica stratum of the specified composition in the amorphous or polycrystalline state is deposited on the replica master in order to acquire the original relief texture. It has been found that, when the replica stratum is recrystallized, it assumes a replica single crystal structure corresponding to the starting single crystal structure.

Abstract translation: 蚀刻特定组成的起始单晶（例如硅）的表面以产生浮雕纹理; 释放组合物层（例如铝）沉积在浮雕纹理上以获得复制纹理并被释放以提供复制母版; 以非晶态或多晶状态的特定组成的复制层沉积在复制主体上以获得原始浮雕纹理。 已经发现，当复制层重结晶时，其呈现对应于起始单晶结构的复制单晶结构。

公开(公告)号：US3996891A

公开(公告)日：1976-12-14

申请号：US553488

申请日：1975-02-27

Applicant: Nobuyuki Isawa ,  Kazuya Tanabe

Inventor： Nobuyuki Isawa ,  Kazuya Tanabe

IPC: C30B19/06 ,  H01L21/208 ,  B05C3/04 ,  B01J17/04

CPC classification number: C30B19/068 ,  C30B19/06 ,  H01L21/02543 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628

Abstract: Apparatus for and methods of forming a liquid phase epitaxial growth layer on a semiconductor wafer by floating the wafer on a solution which forms the source of the epitaxial growth layer.

Abstract translation: 用于通过在形成外延生长层的源的溶液上漂浮晶片来在半导体晶片上形成液相外延生长层的装置和方法。

公开(公告)号：US3962027A

公开(公告)日：1976-06-08

申请号：US504311

申请日：1974-09-09

Applicant: Timothy Michael Bruton

Inventor： Timothy Michael Bruton

IPC: C01G23/00 ,  C30B9/00 ,  C30B9/04 ,  C30B15/00 ,  C30B17/00 ,  C30B29/32 ,  B01J17/04 ,  B01J17/20 ,  C01G29/00

CPC classification number: C30B17/00 ,  C30B15/00 ,  C30B29/32 ,  C30B9/00

Abstract: Method of growing single crystal of Bi.sub.4 Ti.sub.3 O.sub.12 by a top-seeded growth technique. A solution of TiO.sub.2 is a solvent consisting of Bi.sub.2 O.sub.3 with/without B.sub.2 O.sub.3 is prepared. The temperature of the solution is adjusted to a value which is not more than 5.degree.C above the saturation temperature of the solution, and is maintained at this value while the degree of saturation of the solution is increased by dissolving TiO.sub.2. A Bi.sub.4 Ti.sub.3 O.sub.12 seed crystal is then lowered into the solution which is gradually cooled so as to grow a single crystal. The transparency of crystals grown from a solution containing B.sub.2 O.sub.3 in addition to Bi.sub.2 O.sub.3 is better than that of crystals grown from solutions in which the solvent consists solely of Bi.sub.2 O.sub.3.