公开(公告)号：US10720313B2

公开(公告)日：2020-07-21

申请号：US16108726

申请日：2018-08-22

Applicant: Tokyo Electron Limited

Inventor： Masanori Sato ,  Ryusei Kashimura ,  Tetsu Tsunamoto ,  Yoshinori Osaki ,  Toshiyuki Arakane

IPC: G01R31/00 ,  H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: A measuring device includes a switch that switches a connection of an electrode to which a direct current voltage is applied, wherein the electrode is within an electrostatic chuck disposed in a plasma processing device; a component provided with electrostatic capacitance, wherein the component is connected to the switch; and a measuring unit that measures a value corresponding to an electric charge amount accumulated in the component provided with the electrostatic capacitance.

公开(公告)号：US11456199B2

公开(公告)日：2022-09-27

申请号：US16728161

申请日：2019-12-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryusei Kashimura ,  Masanori Sato ,  Tetsu Tsunamoto

IPC: H01L21/683 ,  B23Q17/00 ,  H01L21/67

Abstract: In a measurement method, a terminal is brought into contact with an electrode in an electrostatic chuck in contact with a substrate that is grounded. Further, the terminal, the electrostatic chuck and the substrate are fixed, and a current value and a voltage value are measured using an ammeter and a voltmeter, respectively, that are connected to the terminal. In addition, whether or not the terminal and the electrode are electrically connected is determined from a slope of the current value and/or a peak current value based on the measured current value and the voltage value.

公开(公告)号：US11664263B2

公开(公告)日：2023-05-30

申请号：US17408658

申请日：2021-08-23

Applicant: Tokyo Electron Limited

Inventor： Yusuke Aoki ,  Ryusei Kashimura

IPC: H01L21/683 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32724 ,  H01L21/68742

Abstract: A substrate processing method is provided. The method includes a) causing a substrate to be attracted to an electrostatic chuck, and b) processing the substrate. The method includes c) determining a charge removal temperature based on information preliminarily stored in a storage, thereby adjusting a surface temperature of the electrostatic chuck to be greater than or equal to the determined charge removal temperature, the information indicating a relationship between a maximum surface temperature of the electrostatic chuck, during substrate processing, and a residual charge amount for the processed substrate. The method includes d) removing a charge from the processed substrate.