公开(公告)号：US20200035553A1

公开(公告)日：2020-01-30

申请号：US16491678

申请日：2018-02-27

Applicant: Tokyo Electron Limited

Inventor： Koichi YATSUDA ,  Takashi HAYAKAWA ,  Mitsuaki IWASHITA ,  Takashi TANAKA

IPC: H01L21/768 ,  H01L27/11556 ,  H01L27/11582 ,  H01L23/522 ,  H01L23/528

Abstract: A method includes a step of performing a selective catalyst treatment by supplying a catalyst solution to an upper surface of an exposed interconnection layer forming a step portion of a stepped shape formed by pair layers stacked to form the stepped shape, the pair layer including an interconnection layer formed on an insulating layer, and a step of selectively growing a metal layer by performing electroless plating on the upper surface of the interconnection layer on which the catalyst treatment is performed.