公开(公告)号：US20240087916A1

公开(公告)日：2024-03-14

申请号：US18499667

申请日：2023-11-01

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Yoji IIZUKA ,  Mitsuaki IWASHITA ,  Antonio ROTONDARO ,  Dipak ARYAL ,  Takeo NAKANO ,  Ryuichi ASAKO ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Naoki UMESHITA ,  Takashi HAYAKAWA

IPC: H01L21/67 ,  C23C16/26 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01L21/67051 ,  C23C16/26 ,  C23C16/4412 ,  C23C16/45587 ,  C23C16/50 ,  H01L21/6704

Abstract: A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

公开(公告)号：US20150194441A1

公开(公告)日：2015-07-09

申请号：US14592281

申请日：2015-01-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi YATSUDA ,  Takaaki TSUNOMURA ,  Takashi HAYAKAWA ,  Hiromasa MOCHIKI ,  Kazuhide HASEBE

IPC: H01L27/115 ,  H01L21/28

CPC classification number: H01L27/11582 ,  H01L27/1157 ,  H01L27/11575

Abstract: Disclosed is method of manufacturing a semiconductor device. The method includes: forming an insulating film on one side of a substrate; forming a carbon film on the insulating film formed in the forming of the insulating film; forming an insulating film-carbon film laminate including a plurality of insulating films and carbon films alternately laminated on the one side of the substrate, by repeating the forming of the insulating film and the forming of the carbon film multiple times; removing the carbon films included in the insulating film-carbon film laminate; and forming electrode films in regions from which the carbon films are removed in the removing of the carbon films to obtain an insulating film-electrode film laminate in which the insulating films and the electrode films are laminated in a plurality of layers.

Abstract translation: 公开了制造半导体器件的方法。 该方法包括：在基板的一侧上形成绝缘膜; 在形成绝缘膜的绝缘膜上形成碳膜; 通过重复绝缘膜的形成和碳膜的形成多次，形成包含交替层压在基板的一侧上的多个绝缘膜和碳膜的绝缘膜 - 碳膜层压体; 除去包含在绝缘膜 - 碳膜层压体中的碳膜; 以及在去除碳膜时从其中除去碳膜的区域中形成电极膜，以获得绝缘膜 - 电极膜层压体，其中绝缘膜和电极膜以多层层叠。

公开(公告)号：US20220403509A1

公开(公告)日：2022-12-22

申请号：US17350125

申请日：2021-06-17

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Yoji IIZUKA ,  Mitsuaki IWASHITA ,  Antonio ROTONDARO ,  Dipak ARYAL ,  Takeo NAKANO ,  Ryuichi ASAKO ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Naoki UMESHITA ,  Takashi HAYAKAWA

IPC: C23C16/44 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50

Abstract: According to one aspect of the present disclosure, a vacuum processing apparatus includes: a decompressable process container; a supply port that is formed on a side wall of the process container and that is configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container.

公开(公告)号：US20200035553A1

公开(公告)日：2020-01-30

申请号：US16491678

申请日：2018-02-27

Applicant: Tokyo Electron Limited

Inventor： Koichi YATSUDA ,  Takashi HAYAKAWA ,  Mitsuaki IWASHITA ,  Takashi TANAKA

IPC: H01L21/768 ,  H01L27/11556 ,  H01L27/11582 ,  H01L23/522 ,  H01L23/528

Abstract: A method includes a step of performing a selective catalyst treatment by supplying a catalyst solution to an upper surface of an exposed interconnection layer forming a step portion of a stepped shape formed by pair layers stacked to form the stepped shape, the pair layer including an interconnection layer formed on an insulating layer, and a step of selectively growing a metal layer by performing electroless plating on the upper surface of the interconnection layer on which the catalyst treatment is performed.

公开(公告)号：US20200152475A1

公开(公告)日：2020-05-14

申请号：US16745720

申请日：2020-01-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi YATSUDA ,  Takashi HAYAKAWA ,  Hiroshi OKUNO ,  Reiji NIINO ,  Hiroyuki HASHIMOTO ,  Tatsuya YAMAGUCHI

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/768

Abstract: There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.

公开(公告)号：US20130075248A1

公开(公告)日：2013-03-28

申请号：US13624652

申请日：2012-09-21

Applicant: TOKYO ELECTRON LIMITED ,  HYOGO PREFECTURE

Inventor： Kenichi HARA ,  Isao YAMADA ,  Noriaki TOYODA ,  Takashi HAYAKAWA

IPC: C23F4/02

CPC classification number: H01L21/32136 ,  C23F4/02 ,  H01L21/3065

Abstract: Art etching method for anisotropically etching a Cu film on a substrate surface includes providing a substrate having a Cu film on a surface thereof in a chamber and supplying an organic compound into the chamber while setting the inside ox the chamber to a vacuum state and irradiating an oxygen gas cluster ion beam to the Cu film. The etching method further includes oxidizing Cu or the Cu film to a copper oxide by oxygen gas cluster ions in the oxygen gas cluster ion beam and anisotropically etching the Cu film by reacting the copper oxide and the organic compound.

Abstract translation: 在基板表面上各向异性蚀刻Cu膜的艺术蚀刻方法包括在室内在其表面上提供具有Cu膜的基板，并将该有机化合物供给到室中，同时将该室内部设置为真空状态并照射 氧气团簇离子束到Cu膜。 蚀刻方法还包括在氧气簇离子束中通过氧气团簇离子将Cu或Cu膜氧化成氧化铜，并通过使氧化铜和有机化合物反应各向异性蚀刻Cu膜。

公开(公告)号：US20230223251A1

公开(公告)日：2023-07-13

申请号：US17997158

申请日：2021-04-20

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Mitsuaki IWASHITA ,  Naoki UMESHITA ,  Yoji IIZUKA ,  Takashi HAYAKAWA ,  Kenji SEKIGUCHI ,  Koji AKIYAMA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/285

CPC classification number: H01L21/02307 ,  H01L21/6715 ,  H01L21/28556 ,  H01L21/0228

Abstract: In a method of manufacturing a semiconductor device, the method includes: applying a liquid material containing an ionic liquid on a substrate to form a protective film; transferring at an atmosphere the substrate on which the protective film is formed; and removing the protective film from the substrate that has been transferred at the atmosphere.

公开(公告)号：US20180025917A1

公开(公告)日：2018-01-25

申请号：US15654307

申请日：2017-07-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi YATSUDA ,  Takashi HAYAKAWA ,  Hiroshi OKUNO ,  Reiji NIINO ,  Hiroyuki HASHIMOTO ,  Tatsuya YAMAGUCHI

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01L21/02118 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31127 ,  H01L21/31138 ,  H01L21/67063 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/76811 ,  H01L23/53238 ,  H01L23/53295

Abstract: There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.