公开(公告)号：US06255036B1

公开(公告)日：2001-07-03

申请号：US09664554

申请日：2000-09-18

申请人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

发明人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

IPC分类号： G03C500

CPC分类号： G03F7/091 ,  Y10S430/151

摘要： Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.

摘要翻译： 公开了形成抗蚀剂图案的方法，其解决了由于来自基板的反射光引起的由于偏光和干涉现象引起的问题（尺寸精度降低），即使具有高反射率的基板或具有透明度的基板也是精细且具有高精度 膜或具有不平坦表面的基底。 在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。 在基板和抗蚀剂膜之间形成由作为曝光用的干涉膜的上层膜构成的双层抗反射膜的第二种方法和具有比上层的曝光吸光度高的下层膜 并且用作遮光膜。 在基板和抗蚀剂膜之间形成由反射曝光光的下层膜构成的两层抗反射膜和作为曝光用光的干涉膜的上层膜的第三种方法。 在形成抗反射膜的过程中可以获得非常高的抗反射效果，而不受包括具有透明膜的基板的种类的影响。 利用这些方法，可以形成精细且高精度的抗蚀剂图案。 这些方法可以用于形成图案化的抗蚀剂膜以蚀刻对象膜，例如在形成半导体器件的微电路和/或栅极（和字线）中。

公开(公告)号：US5733712A

公开(公告)日：1998-03-31

申请号：US601361

申请日：1996-02-16

申请人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

发明人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

IPC分类号： G03F7/09 ,  G03C1/825

CPC分类号： G03F7/091 ,  Y10S430/151

摘要： A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.

摘要翻译： 在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。 在基板和抗蚀剂膜之间形成由作为曝光用的干涉膜的上层膜构成的双层抗反射膜的第二种方法和具有比上层的曝光吸光度高的下层膜 并且用作遮光膜。 在基板和抗蚀剂膜之间形成由反射曝光光的下层膜构成的两层抗反射膜和作为曝光用光的干涉膜的上层膜的第三种方法。 在形成抗反射膜的过程中可以获得非常高的抗反射效果，而不受包括具有透明膜的基板的种类的影响。 利用这些方法，可以形成精细且高精度的抗蚀剂图案。 这些方法可以用于形成图案化的抗蚀剂膜以蚀刻对象膜，例如在形成半导体器件的微电路和/或栅极（和字线）中。

公开(公告)号：US06355400B1

公开(公告)日：2002-03-12

申请号：US09849487

申请日：2001-05-07

申请人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

发明人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

IPC分类号： G03C1825

CPC分类号： G03F7/091 ,  Y10S430/151

摘要： Disclosed are methods for forming a resist pattern which solve a problem caused by halation and interference phenomena due to reflected light from the substrate. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper interference film for the exposure light and a lower film having higher exposure light absorbance than the upper film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower film that reflects exposure light and an upper film that is an interference film for the exposure light.

摘要翻译： 公开了形成抗蚀剂图案的方法，该抗蚀剂图案解决了由于来自基板的反射光引起的由于偏离和干扰现象引起的问题。 在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。 在基板和抗蚀剂膜之间形成由用于曝光光的上部干涉膜构成的两层抗反射膜和具有比上部膜更高的曝光吸光度的下部膜并用作遮光膜的第二种方法。 第三种方法在基板和抗蚀剂膜之间形成由反射曝光光的下膜和作为曝光光的干涉膜的上膜构成的两层抗反射膜。

公开(公告)号：US5935765A

公开(公告)日：1999-08-10

申请号：US159786

申请日：1998-09-24

申请人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

发明人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

IPC分类号： G03F7/09 ,  G03C1/825

CPC分类号： G03F7/091 ,  Y10S430/151

摘要： Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.

摘要翻译： 公开了形成抗蚀剂图案的方法，其解决了由于来自基板的反射光引起的由于偏光和干涉现象引起的问题（尺寸精度降低），即使具有高反射率的基板或具有透明度的基板也是精细且具有高精度 膜或具有不平坦表面的基底。 在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。 在基板和抗蚀剂膜之间形成由作为曝光用的干涉膜的上层膜构成的双层抗反射膜的第二种方法和具有比上层的曝光吸光度高的下层膜 并且用作遮光膜。 在基板和抗蚀剂膜之间形成由反射曝光光的下层膜构成的两层抗反射膜和作为曝光用光的干涉膜的上层膜的第三种方法。 在形成抗反射膜的过程中可以获得非常高的抗反射效果，而不受包括具有透明膜的基板的种类的影响。 利用这些方法，可以形成精细且高精度的抗蚀剂图案。 这些方法可以用于形成图案化的抗蚀剂膜以蚀刻对象膜，例如在形成半导体器件的微电路和/或栅极（和字线）中。

公开(公告)号：US5985517A

公开(公告)日：1999-11-16

申请号：US285010

申请日：1999-04-01

申请人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

发明人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

IPC分类号： G03F7/09 ,  G03C1/825

CPC分类号： G03F7/091 ,  Y10S430/151

摘要： Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.

摘要翻译： 公开了形成抗蚀剂图案的方法，其解决了由于来自基板的反射光引起的由于偏光和干涉现象引起的问题（尺寸精度降低），即使具有高反射率的基板或具有透明度的基板也是精细且具有高精度 膜或具有不平坦表面的基底。 在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。 在基板和抗蚀剂膜之间形成由作为曝光用的干涉膜的上层膜构成的双层抗反射膜的第二种方法和具有比上层的曝光吸光度高的下层膜 并且用作遮光膜。 在基板和抗蚀剂膜之间形成由反射曝光光的下层膜构成的两层抗反射膜和作为曝光用光的干涉膜的上层膜的第三种方法。 在形成抗反射膜的过程中可以获得非常高的抗反射效果，而不受包括具有透明膜的基板的种类的影响。 利用这些方法，可以形成精细且高精度的抗蚀剂图案。 这些方法可以用于形成图案化的抗蚀剂膜以蚀刻对象膜，例如在形成半导体器件的微电路和/或栅极（和字线）中。

公开(公告)号：US06555295B1

公开(公告)日：2003-04-29

申请号：US10229216

申请日：2002-08-28

申请人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

发明人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

IPC分类号： G03C500

CPC分类号： G03F7/091 ,  Y10S430/151

摘要： A very high reflection prevention effect can be produced for a variety of kinds of substrates, including those having transparent films and those having high reflectivity like metallic films, without posing any problem, such as aspect ratios, during the process of forming anti-reflective films This method can form fine and precise resist patterns and therefore improve the yield and reliability of devices to be manufactured. When applied to logic LSIs, this invention enables them to be manufactured at high dimensional precision and increases their operation speeds. While we have shown and described several embodiments in accordance with the present invention, it is understood that the same is not limited thereto, but is susceptible to numerous changes and modifications as is known in the art; and we therefore do not wish to be limited to the details shown and described herein, but intend to cover all such modifications as are encompassed by the scope of the appended claims.

摘要翻译： 可以在形成抗反射膜的工艺期间，在各种各样的基板（包括具有透明膜和具有高反射率的金属膜的那些基板）中产生非常高的防反射效果，而不会产生诸如纵横比的任何问题 该方法可以形成精细和精确的抗蚀剂图案，从而提高要制造的器件的产量和可靠性。 当应用于逻辑LSI时，本发明使得它们能够以高尺寸精度制造并提高它们的操作速度。尽管我们已经示出和描述了根据本发明的几个实施例，但是应当理解，其不限于此， 容易受到本领域已知的许多改变和修饰; 因此，我们不希望限于本文所示和描述的细节，而是旨在涵盖由所附权利要求的范围所包含的所有这样的修改。

公开(公告)号：US6162588A

公开(公告)日：2000-12-19

申请号：US440111

申请日：1999-11-15

申请人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

发明人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

IPC分类号： G03F7/09 ,  G03C5/00

CPC分类号： G03F7/091 ,  Y10S430/151

摘要： Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.

摘要翻译： 公开了形成抗蚀剂图案的方法，其解决了由于来自基板的反射光引起的由于偏光和干涉现象引起的问题（尺寸精度降低），即使具有高反射率的基板或具有透明度的基板也是精细且具有高精度 膜或具有不平坦表面的基底。 在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。 在基板和抗蚀剂膜之间形成由作为曝光用的干涉膜的上层膜构成的双层抗反射膜的第二种方法和具有比上层的曝光吸光度高的下层膜 并且用作遮光膜。 在基板和抗蚀剂膜之间形成由反射曝光光的下层膜构成的两层抗反射膜和作为曝光用光的干涉膜的上层膜的第三种方法。 在形成抗反射膜的过程中可以获得非常高的抗反射效果，而不受包括具有透明膜的基板的种类的影响。 利用这些方法，可以形成精细且高精度的抗蚀剂图案。 这些方法可以用于形成图案化的抗蚀剂膜以蚀刻对象膜，例如在形成半导体器件的微电路和/或栅极（和字线）中。

公开(公告)号：US5846693A

公开(公告)日：1998-12-08

申请号：US21186

申请日：1998-02-10

申请人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

发明人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

IPC分类号： G03F7/09 ,  G03C1/825

CPC分类号： G03F7/091 ,  Y10S430/151

摘要： Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method.forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.

摘要翻译： 公开了形成抗蚀剂图案的方法，其解决了由于来自基板的反射光引起的由于偏光和干涉现象引起的问题（尺寸精度降低），即使具有高反射率的基板或具有透明度的基板也是精细且具有高精度 膜或具有不平坦表面的基底。 在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。 在基板和抗蚀剂膜之间形成由作为曝光用的干涉膜的上层膜构成的双层抗反射膜的第二种方法和具有比上层的曝光吸光度高的下层膜 并且用作遮光膜。 在基板和抗蚀剂膜之间形成由反射曝光光的下层膜构成的两层抗反射膜和作为曝光用光的干涉膜的上层膜的第三种方法。 在形成抗反射膜的过程中可以获得非常高的抗反射效果，而不受包括具有透明膜的基板的种类的影响。 利用这些方法，可以形成精细且高精度的抗蚀剂图案。 这些方法可以用于形成图案化的抗蚀剂膜以蚀刻对象膜，例如在形成半导体器件的微电路和/或栅极（和字线）中。

公开(公告)号：US06461776B1

公开(公告)日：2002-10-08

申请号：US10054932

申请日：2002-01-25

申请人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

发明人： Toshihiko Tanaka ,  Shoichi Uchino ,  Naoko Asai

IPC分类号： G03F900

CPC分类号： G03F7/091 ,  Y10S430/151

摘要： Disclosed are methods for forming a resist pattern which solve a problem caused by halation and interference phenomena due to reflected light from the substrate. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper interference film for the exposure light and a lower film having higher exposure light absorbance than the upper film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower film that reflects exposure light and an upper film that is an interference film for the exposure light.

摘要翻译： 公开了形成抗蚀剂图案的方法，该抗蚀剂图案解决了由于来自基板的反射光引起的由于偏离和干扰现象引起的问题。 在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。 在基板和抗蚀剂膜之间形成由用于曝光光的上部干涉膜构成的两层抗反射膜和具有比上部膜更高的曝光吸光度的下部膜并用作遮光膜的第二种方法。 第三种方法在基板和抗蚀剂膜之间形成由反射曝光光的下膜和作为曝光光的干涉膜的上膜构成的两层抗反射膜。

公开(公告)号：US20090201443A1

公开(公告)日：2009-08-13

申请号：US12222340

申请日：2008-08-07

申请人： Susumu Sasaki ,  Hitoshi Azuma ,  Takao Ebine ,  Tomio Yaguchi ,  Shoichi Uchino ,  Akiko Iwata

发明人： Susumu Sasaki ,  Hitoshi Azuma ,  Takao Ebine ,  Tomio Yaguchi ,  Shoichi Uchino ,  Akiko Iwata

IPC分类号： G02F1/1333 ,  G02F1/13357

CPC分类号： G09F9/35 ,  B32B17/064 ,  G02F1/1333 ,  G02F1/133604 ,  G02F2001/133302 ,  G02F2201/56

摘要： A liquid crystal display device preventing a liquid crystal display panel from damage by bending of a light-transmissive substrate and capable of curving a display surface of the panel is provided. The liquid crystal display device comprising: a liquid crystal display panel having a liquid crystal layer sealed between a pair of light-transmissive substrates having pixel formation electrodes on inner surfaces thereof, and formed by assembling positive and negative curved surfaces with respect to one direction; a backlight mounted on a rear surface of the panel along a curved shape of the panel and having at least one light emission device irradiating illumination light toward the rear surface; and a resin member held in a space between peripheral portions where the panel is opposed to the backlight, and fixing and holding a curved state, is provided. Distortion of the light transmissive glass substrates by bending of the panel is eased.

摘要翻译： 提供一种液晶显示装置，其防止液晶显示面板由于透光性基板的弯曲而损伤，能够弯曲面板的显示面。 该液晶显示装置包括：液晶显示面板，其具有密封在一对透光性基板上的液晶层，该透光基板的内表面具有像素形成电极，并且通过相对于一个方向组装正和负曲面而形成; 沿着面板的弯曲形状安装在面板的后表面上并且具有朝向后表面照射照明光的至少一个发光装置的背光; 并且设置有保持在面板与背光相对的周边部分之间的空间中并且固定并保持弯曲状态的树脂构件。 通过面板的弯曲导致的透光玻璃基板的变形减轻。