公开(公告)号：US20040014274A1

公开(公告)日：2004-01-22

申请号：US10462846

申请日：2003-06-16

Applicant: U.S. PHILIPS CORPORATION

Inventor： Nicole Anne Helena Freddy Wils ,  Michiel Slotboom ,  Franciscus Petrus Widdershoven

IPC: H01L021/8238

CPC classification number: H01L27/11568 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42328 ,  H01L29/66825 ,  H01L29/66833

Abstract: A semiconductor device comprises a semiconductor body (1) which is provided at a surface (2) with a non-volatile memory cell comprising a source (3) and a drain (4), and an access gate (14) which is electrically insulated from a gate structure (8) comprising a control gate (9), the gate structure (8) being electrically insulated from the semiconductor body (1) by a gate dielectric (11,25). The gate dielectric (11,25) is provided with a charge-storage region wherein data in the form of electric charge can be stored. The access gate (14) has a substantially flat surface portion (17) extending substantially parallel to the surface (2) of the semiconductor body (1) and has the shape of a block which is disposed against the gate structure (8) without overlapping the gate structure (8).

Abstract translation: 半导体器件包括半导体本体（1），其在表面（2）处设置有包括源极（3）和漏极（4）的非易失性存储单元，以及存取栅极（14），其电绝缘 从包括控制栅极（9）的栅极结构（8），栅极结构（8）通过栅极电介质（11,25）与半导体本体（1）电绝缘。 栅极电介质（11,25）设置有电荷存储区域，其中可以存储电荷形式的数据。 进入门（14）具有基本上平行于半导体本体（1）的表面（2）延伸的基本平坦的表面部分（17），并且具有块状形状，该块形状抵靠栅极结构（8）而不重叠 门结构（8）。