公开(公告)号：US11665888B2

公开(公告)日：2023-05-30

申请号：US17134193

申请日：2020-12-25

Applicant: UNITED MICROELECTRONICS CORP. ,  Fujian Jinhua Integrated Circuit Co., Ltd.

Inventor： Wei-Lun Hsu ,  Hung-Lin Shih ,  Che-Hung Huang ,  Ping-Cheng Hsu ,  Hsu-Yang Wang

IPC: H01L21/00 ,  H01L21/768 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8238

CPC classification number: H10B12/485 ,  H01L21/76224 ,  H01L21/76877 ,  H10B12/053 ,  H01L21/823481 ,  H01L21/823878 ,  H10B12/482

Abstract: A method for fabricating semiconductor device includes the steps of: forming a semiconductor layer on a substrate; removing part of the semiconductor layer and part of the substrate to form a trench; forming a liner in the trench; removing part of the liner to form a spacer adjacent to two sides of the trench; forming a conductive layer in the trench; forming a metal layer on the conductive layer; forming a mask layer on the metal layer; and patterning the mask layer, the metal layer, and the conductive layer to form a bit line structure.

公开(公告)号：US11239338B2

公开(公告)日：2022-02-01

申请号：US16666430

申请日：2019-10-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou ,  Chih-Tung Yeh

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/308 ,  H01L29/205 ,  H01L29/20

Abstract: According to an embodiment of the present invention, a method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

公开(公告)号：US20240234539A9

公开(公告)日：2024-07-11

申请号：US18395657

申请日：2023-12-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/7786

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

公开(公告)号：US12027604B2

公开(公告)日：2024-07-02

申请号：US18215787

申请日：2023-06-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou ,  Chih-Tung Yeh

IPC: H01L29/66 ,  H01L21/308 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/66462 ,  H01L21/3081 ,  H01L29/7787 ,  H01L29/2003 ,  H01L29/205

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

公开(公告)号：US20230369448A1

公开(公告)日：2023-11-16

申请号：US18221396

申请日：2023-07-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Bo-Rong Chen ,  Che-Hung Huang ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Chih-Tung Yeh ,  Shin-Chuan Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L29/7783 ,  H01L29/2003

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

公开(公告)号：US20230335614A1

公开(公告)日：2023-10-19

申请号：US18215787

申请日：2023-06-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou ,  Chih-Tung Yeh

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/308 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/66462 ,  H01L29/7787 ,  H01L21/3081 ,  H01L29/2003 ,  H01L29/205

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

公开(公告)号：US11735644B2

公开(公告)日：2023-08-22

申请号：US17551149

申请日：2021-12-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou ,  Chih-Tung Yeh

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/308 ,  H01L29/205 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L21/3081 ,  H01L29/7787 ,  H01L29/2003 ,  H01L29/205

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

公开(公告)号：US20220278222A1

公开(公告)日：2022-09-01

申请号：US17745841

申请日：2022-05-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

公开(公告)号：US20220109058A1

公开(公告)日：2022-04-07

申请号：US17551149

申请日：2021-12-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou ,  Chih-Tung Yeh

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/308 ,  H01L29/205 ,  H01L29/20

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

公开(公告)号：US20240322008A1

公开(公告)日：2024-09-26

申请号：US18731392

申请日：2024-06-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou ,  Chih-Tung Yeh

IPC: H01L29/66 ,  H01L21/308 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L21/3081 ,  H01L29/7787 ,  H01L29/2003 ,  H01L29/205

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer, forming a second barrier layer on the first barrier layer, forming a first hard mask on the second barrier layer, removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.