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公开(公告)号：US11934106B2
公开(公告)日：2024-03-19
申请号：US17880700
申请日：2022-08-04
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Shu-Yen Liu , Hui-Fang Kuo , Chian-Ting Huang , Wei-Cyuan Lo , Yung-Feng Cheng , Chung-Yi Chiu
CPC classification number: G03F7/70441 , G03F1/36 , G03F7/705
Abstract: An optical proximity correction (OPC) device and method is provided. The OPC device includes an analysis unit, a reverse pattern addition unit, a first OPC unit, a second OPC unit and an output unit. The analysis unit is configured to analyze a defect pattern from a photomask layout. The reverse pattern addition unit is configured to provide a reverse pattern within the defect pattern. The first OPC unit is configured to perform a first OPC procedure on whole of the photomask layout. The second OPC unit is configured to perform a second OPC procedure on the defect pattern of the photomask layout to enhance an exposure tolerance window. The output unit is configured to output the photomask layout which is corrected.
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公开(公告)号：US20240005475A1
公开(公告)日：2024-01-04
申请号：US17878896
申请日：2022-08-01
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Pai-Chi Chen , Chian-Ting Huang , Yung-Feng Cheng
CPC classification number: G06T7/0006 , G06T7/62 , G06T2207/30148
Abstract: The present invention provides a photomask inspection method, including steps of defining an anchor ratio, providing a photomask and measuring the photomask to obtain a measured ratio, wherein the measured ratio is equal to a value of an image intensity extremum divided by an image intensity threshold or is equal to a value of the image intensity threshold divided by the image intensity extremum when the photomask is measured in an image measurement system tool for a specific critical dimension, and if the measured ratio is larger than the anchor ratio, the photomask is regarded as passing the inspection, and if the measured ratio is smaller than the anchor ratio, the photomask is regarded as failing the inspection.
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