公开(公告)号：US20190361339A1

公开(公告)日：2019-11-28

申请号：US15986799

申请日：2018-05-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Pu Chen ,  Shu-Yen Liu ,  Tang-Chun Weng ,  Tuan-Yen Yu

IPC: G03F1/38

Abstract: The present invention provides a photomask, comprising: a substrate, a first region, a second region and a third region are defined thereon, wherein the third region is disposed between the first region and the second region, a patterned layer disposed on the substrate, wherein the patterned layer comprises a first patterned layer disposed in the first region, a second patterned layer disposed in the second region, and a third patterned layer disposed in the third region, and wherein a thickness of the first patterned layer is equal to a thickness of the second patterned layer, the thickness of the first patterned layer is different from a thickness of the third patterned layer, and at least one recess disposed in the third region.

公开(公告)号：US10747099B2

公开(公告)日：2020-08-18

申请号：US15986799

申请日：2018-05-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Pu Chen ,  Shu-Yen Liu ,  Tang-Chun Weng ,  Tuan-Yen Yu

IPC: G03F1/38 ,  G03F1/54 ,  G03F1/50 ,  H01L21/027

Abstract: The present invention provides a photomask, comprising: a substrate, a first region, a second region and a third region are defined thereon, wherein the third region is disposed between the first region and the second region, a patterned layer disposed on the substrate, wherein the patterned layer comprises a first patterned layer disposed in the first region, a second patterned layer disposed in the second region, and a third patterned layer disposed in the third region, and wherein a thickness of the first patterned layer is equal to a thickness of the second patterned layer, the thickness of the first patterned layer is different from a thickness of the third patterned layer, and at least one recess disposed in the third region.

公开(公告)号：US11934106B2

公开(公告)日：2024-03-19

申请号：US17880700

申请日：2022-08-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shu-Yen Liu ,  Hui-Fang Kuo ,  Chian-Ting Huang ,  Wei-Cyuan Lo ,  Yung-Feng Cheng ,  Chung-Yi Chiu

IPC: G03F7/00 ,  G03F1/36

CPC classification number: G03F7/70441 ,  G03F1/36 ,  G03F7/705

Abstract: An optical proximity correction (OPC) device and method is provided. The OPC device includes an analysis unit, a reverse pattern addition unit, a first OPC unit, a second OPC unit and an output unit. The analysis unit is configured to analyze a defect pattern from a photomask layout. The reverse pattern addition unit is configured to provide a reverse pattern within the defect pattern. The first OPC unit is configured to perform a first OPC procedure on whole of the photomask layout. The second OPC unit is configured to perform a second OPC procedure on the defect pattern of the photomask layout to enhance an exposure tolerance window. The output unit is configured to output the photomask layout which is corrected.