公开(公告)号：US20240313074A1

公开(公告)日：2024-09-19

申请号：US18671941

申请日：2024-05-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Wen Huang ,  Shih-An Huang

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/06 ,  H01L29/10 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/42376 ,  H01L21/28088 ,  H01L21/28114 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/4966 ,  H01L29/66681 ,  H01L29/7816

Abstract: A work function metal gate device includes a gate, a drift region, a source, a drain and a first isolation structure. The gate includes a convex stair-shaped work function metal stack or a concave stair-shaped work function metal stack disposed on a substrate. The drift region is disposed in the substrate below a part of the gate. The source is located in the substrate and the drain is located in the drift region beside the gate. The first isolation structure is disposed in the drift region between the gate and the drain.

公开(公告)号：US12021129B2

公开(公告)日：2024-06-25

申请号：US17945122

申请日：2022-09-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Wen Huang ,  Shih-An Huang

IPC: H01L29/76 ,  H01L21/28 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/94 ,  H01L31/113

CPC classification number: H01L29/42376 ,  H01L21/28088 ,  H01L21/28114 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/4966 ,  H01L29/66681 ,  H01L29/7816

Abstract: A work function metal gate device includes a gate, a drift region, a source, a drain and a first isolation structure. The gate includes a convex stair-shaped work function metal stack or a concave stair-shaped work function metal stack disposed on a substrate. The drift region is disposed in the substrate below a part of the gate. The source is located in the substrate and the drain is located in the drift region beside the gate. The first isolation structure is disposed in the drift region between the gate and the drain.

公开(公告)号：US11482605B2

公开(公告)日：2022-10-25

申请号：US17128168

申请日：2020-12-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Wen Huang ,  Shih-An Huang

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/113 ,  H01L29/423 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/49 ,  H01L21/28 ,  H01L29/10

Abstract: A work function metal gate device includes a gate, a drift region, a source, a drain and a first isolation structure. The gate includes a convex stair-shaped work function metal stack or a concave stair-shaped work function metal stack disposed on a substrate. The drift region is disposed in the substrate below a part of the gate. The source is located in the substrate and the drain is located in the drift region beside the gate. The first isolation structure is disposed in the drift region between the gate and the drain.

公开(公告)号：US20230014945A1

公开(公告)日：2023-01-19

申请号：US17945122

申请日：2022-09-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Wen Huang ,  Shih-An Huang

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/49 ,  H01L21/28 ,  H01L29/10

Abstract: A work function metal gate device includes a gate, a drift region, a source, a drain and a first isolation structure. The gate includes a convex stair-shaped work function metal stack or a concave stair-shaped work function metal stack disposed on a substrate. The drift region is disposed in the substrate below a part of the gate. The source is located in the substrate and the drain is located in the drift region beside the gate. The first isolation structure is disposed in the drift region between the gate and the drain.

公开(公告)号：US20220149171A1

公开(公告)日：2022-05-12

申请号：US17128168

申请日：2020-12-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Wen Huang ,  Shih-An Huang

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/49 ,  H01L21/28 ,  H01L29/66

Abstract: A work function metal gate device includes a gate, a drift region, a source, a drain and a first isolation structure. The gate includes a convex stair-shaped work function metal stack or a concave stair-shaped work function metal stack disposed on a substrate. The drift region is disposed in the substrate below a part of the gate. The source is located in the substrate and the drain is located in the drift region beside the gate. The first isolation structure is disposed in the drift region between the gate and the drain.