公开(公告)号：US20230048684A1

公开(公告)日：2023-02-16

申请号：US17976888

申请日：2022-10-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jian-Li Lin ,  Wei-Da Lin ,  Cheng-Guo Chen ,  Ta-Kang Lo ,  Yi-Chuan Chen ,  Huan-Chi Ma ,  Chien-Wen Yu ,  Kuan-Ting Lu ,  Kuo-Yu Liao

IPC: H01L29/94 ,  H01L29/66

Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.

公开(公告)号：US12278282B2

公开(公告)日：2025-04-15

申请号：US17742383

申请日：2022-05-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jian-Li Lin ,  Cheng-Guo Chen ,  Ta-Kang Lo ,  Cheng-Han Wu

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/66

Abstract: A high-electron mobility transistor includes a substrate, a gate electrode, a drain electrode, a source electrode and a first field plate. The substrate includes an active region. The gate electrode is disposed on the substrate. The drain electrode is disposed at one side of the gate electrode. The source electrode is disposed at another side of the gate electrode. The first field plate is electrically connected with the source electrode and extends from the source electrode toward the drain electrode. An overlapping area of the first field plate and the gate electrode is smaller than an overlapping area of the gate electrode and the active region.

公开(公告)号：US20220181505A1

公开(公告)日：2022-06-09

申请号：US17145416

申请日：2021-01-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jian-Li Lin ,  Wei-Da Lin ,  Cheng-Guo Chen ,  Ta-Kang Lo ,  Yi-Chuan Chen ,  Huan-Chi Ma ,  Chien-Wen Yu ,  Kuan-Ting Lu ,  Kuo-Yu Liao

IPC: H01L29/94 ,  H01L29/66

Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.

公开(公告)号：US12283637B2

公开(公告)日：2025-04-22

申请号：US17976888

申请日：2022-10-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jian-Li Lin ,  Wei-Da Lin ,  Cheng-Guo Chen ,  Ta-Kang Lo ,  Yi-Chuan Chen ,  Huan-Chi Ma ,  Chien-Wen Yu ,  Kuan-Ting Lu ,  Kuo-Yu Liao

IPC: H01L29/94 ,  H01L29/66

Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.

公开(公告)号：US20230335630A1

公开(公告)日：2023-10-19

申请号：US17742383

申请日：2022-05-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jian-Li Lin ,  Cheng-Guo Chen ,  Ta-Kang Lo ,  Cheng-Han Wu

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/40

CPC classification number: H01L29/7786 ,  H01L29/66462 ,  H01L29/404

Abstract: A high-electron mobility transistor includes a substrate, a gate electrode, a drain electrode, a source electrode and a first field plate. The substrate includes an active region. The gate electrode is disposed on the substrate. The drain electrode is disposed at one side of the gate electrode. The source electrode is disposed at another side of the gate electrode. The first field plate is electrically connected with the source electrode and extends from the source electrode toward the drain electrode. An overlapping area of the first field plate and the gate electrode is smaller than an overlapping area of the gate electrode and the active region.