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公开(公告)号：US20250142933A1
公开(公告)日：2025-05-01
申请号：US18505135
申请日：2023-11-09
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Su Xing , Jinyu Liao
IPC: H01L29/423 , H01L23/552
Abstract: A radio-frequency (RF) device includes a gate structure extending along a first direction on a substrate, a source/drain region adjacent to two sides of the gate structure, a shallow trench isolation (STI) around the source/drain region, and a shielding structure extending from the gate structure and overlapping an edge of the STI. The gate structure includes a T-shape, in which the T-shape further includes a vertical portion extending along the first direction and a horizontal portion extending along a second direction. The RF device further includes a body region adjacent to the horizontal portion, in which the body region and the source/drain region have different conductive type.
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公开(公告)号：US20250072092A1
公开(公告)日：2025-02-27
申请号：US18948563
申请日：2024-11-15
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Su Xing , Purakh Raj Verma , Rudy Octavius Sihombing , Shyam Parthasarathy , Jinyu Liao
IPC: H01L29/423 , H01L21/8234 , H01L29/06 , H01L29/417
Abstract: A method of manufacturing a multi-finger transistor structure is provided in the present invention, including forming shallow trench isolations in a substrate to define multiple active areas, forming a gate structure on the substrate, wherein the gate structure includes multiple gate parts and multiple connecting parts, and each gate part traverses over one of the active area, and each connecting part alternatively connect one end and the other end of two adjacent gate parts, so as to form meander gate structure.
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公开(公告)号：US12191367B2
公开(公告)日：2025-01-07
申请号：US17752888
申请日：2022-05-25
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Su Xing , Purakh Raj Verma , Rudy Octavius Sihombing , Shyam Parthasarathy , Jinyu Liao
IPC: H01L29/423 , H01L21/8234 , H01L29/06 , H01L29/417
Abstract: A multi-finger transistor structure is provided in the present invention, including multiple active areas, a gate structure consisting of multiple gate parts and connecting parts, wherein each gate part crosses over one of the active areas and each connecting part alternatively connects one end and the other end of the gate parts so as to form a meander gate structure, and multiple sources and drains, wherein one source and one drain are set between two adjacent gate parts, and each gate parts is accompanied by one source and one drain at two sides respectively, and the distance between the drain and the gate part is larger than the distance between the source and the gate part, so that the source and the drain are asymmetric with respect to the corresponding gate part, and air gaps are formed in the dielectric layer between each drain and the corresponding gate part.
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公开(公告)号：US11448318B2
公开(公告)日：2022-09-20
申请号：US16889816
申请日：2020-06-02
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Hai Biao Yao , Su Xing , Jinyu Liao , Purakh Raj Verma
Abstract: The invention provides a seal ring structure, which comprises a substrate, and a seal ring positioned on the substrate, wherein the seal ring comprises an inner seal ring comprising a plurality of inner seal units, wherein each of the inner seal units is arranged at intervals with each other, an outer seal ring comprising a plurality of outer seal units arranged at the periphery of the inner seal ring, wherein each of the outer seal units is arranged at intervals with each other, and a plurality of groups of fence-shaped seal units, wherein at least one group of fence-shaped seal units is positioned between one of the inner seal units and the other adjacent outer seal unit.
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