公开(公告)号：US20250142854A1

公开(公告)日：2025-05-01

申请号：US18523930

申请日：2023-11-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Rudy Octavius Sihombing ,  Su Xing

IPC: H01L29/66 ,  H01L29/78

Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a high-voltage (HV) region and a low-voltage (LV) region, forming a first gate structure on the HV region and a second gate structure on the LV region, forming a first lightly doped drain (LDD) adjacent to one side of the first gate structure and a second LDD adjacent to another side of the first gate structure, and then forming a third lightly doped drain (LDD) adjacent to one side of the second gate structure and a fourth LDD adjacent to another side of the second gate structure. Preferably, the first LDD and the second LDD are asymmetrical, the third LDD and the fourth LDD are asymmetrical, and the second LDD and the third LDD are symmetrical.

公开(公告)号：US20230163184A1

公开(公告)日：2023-05-25

申请号：US17752888

申请日：2022-05-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Su Xing ,  Purakh Raj Verma ,  Rudy Octavius Sihombing ,  Shyam Parthasarathy ,  JINYU LIAO

IPC: H01L29/423 ,  H01L29/417 ,  H01L29/06 ,  H01L21/8234

CPC classification number: H01L29/4238 ,  H01L29/41758 ,  H01L29/0653 ,  H01L21/823418 ,  H01L21/823481

Abstract: A multi-finger transistor structure is provided in the present invention, including multiple active areas, a gate structure consisting of multiple gate parts and connecting parts, wherein each gate part crosses over one of the active areas and each connecting part alternatively connects one end and the other end of the gate parts so as to form a meander gate structure, and multiple sources and drains, wherein one source and one drain are set between two adjacent gate parts, and each gate parts is accompanied by one source and one drain at two sides respectively, and the distance between the drain and the gate part is larger than the distance between the source and the gate part, so that the source and the drain are asymmetric with respect to the corresponding gate part, and air gaps are formed in the dielectric layer between each drain and the corresponding gate part.

公开(公告)号：US20250072092A1

公开(公告)日：2025-02-27

申请号：US18948563

申请日：2024-11-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Su Xing ,  Purakh Raj Verma ,  Rudy Octavius Sihombing ,  Shyam Parthasarathy ,  Jinyu Liao

IPC: H01L29/423 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/417

Abstract: A method of manufacturing a multi-finger transistor structure is provided in the present invention, including forming shallow trench isolations in a substrate to define multiple active areas, forming a gate structure on the substrate, wherein the gate structure includes multiple gate parts and multiple connecting parts, and each gate part traverses over one of the active area, and each connecting part alternatively connect one end and the other end of two adjacent gate parts, so as to form meander gate structure.

公开(公告)号：US12191367B2

公开(公告)日：2025-01-07

申请号：US17752888

申请日：2022-05-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Su Xing ,  Purakh Raj Verma ,  Rudy Octavius Sihombing ,  Shyam Parthasarathy ,  Jinyu Liao

IPC: H01L29/423 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/417

Abstract: A multi-finger transistor structure is provided in the present invention, including multiple active areas, a gate structure consisting of multiple gate parts and connecting parts, wherein each gate part crosses over one of the active areas and each connecting part alternatively connects one end and the other end of the gate parts so as to form a meander gate structure, and multiple sources and drains, wherein one source and one drain are set between two adjacent gate parts, and each gate parts is accompanied by one source and one drain at two sides respectively, and the distance between the drain and the gate part is larger than the distance between the source and the gate part, so that the source and the drain are asymmetric with respect to the corresponding gate part, and air gaps are formed in the dielectric layer between each drain and the corresponding gate part.