公开(公告)号：US20240047225A1

公开(公告)日：2024-02-08

申请号：US17903417

申请日：2022-09-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Liang Ju WEI ,  Chung-Yi CHIU ,  Zhen WU ,  Hsuan-Hsu CHEN ,  Chun-Lung CHEN

IPC: H01L21/3213 ,  H01J37/32

CPC classification number: H01L21/32139 ,  H01J37/32926 ,  H01J2237/334

Abstract: A control method of a multi-stage etching process and a processing device using the same are provided. The control method of the multi-stage etching process includes the following step S. A stack information of a plurality of hard mask layers is set. An etching target condition is set. Through a machine learning model, a parameter setting recipe of the hard mask layers is generated under the etching target condition. The machine learning model is trained based on the stack information of the hard mask layers, a plurality of process parameters and a process result.