公开(公告)号：US20230006041A1

公开(公告)日：2023-01-05

申请号：US17385961

申请日：2021-07-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jing-Wen HUANG ,  Wei-Hao HUANG ,  Chung-Yi CHIU ,  Lung-En KUO ,  Kun-Yuan LIAO

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate and a plurality of nanowires. The substrate has an upper surface. The nanowires are stacked on the upper surface of the substrate along a first direction. The nanowires include a triangle in a cross section, and the nanowires include a plane extending along a second direction, a first down-slant facet on a (111) plane, and a second down-slant facet on an additional (111) plane.