公开(公告)号：US20240038844A1

公开(公告)日：2024-02-01

申请号：US17896096

申请日：2022-08-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Liang Kuo ,  Yen-Hsing Chen ,  Yen-Lun Chen ,  Ruei-Hong Shen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/10 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L29/1033 ,  H01L29/7786 ,  H01L29/66462

Abstract: A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode on the p-type semiconductor layer, and then forming a source electrode and a drain electrode adjacent to two sides of the gate electrode. Preferably, the buffer layer further includes a bottom portion having a first carbon concentration and a top portion having a second carbon concentration, in which the second carbon concentration is less than the first carbon concentration and a thickness of the bottom portion is less than a thickness of the top portion.