公开(公告)号：US12159930B2

公开(公告)日：2024-12-03

申请号：US17897237

申请日：2022-08-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/66 ,  H01L29/16 ,  H01L29/20 ,  H01L29/778

Abstract: A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.

公开(公告)号：US20230020271A1

公开(公告)日：2023-01-19

申请号：US17949241

申请日：2022-09-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hsing Chen ,  Yu-Ming Hsu ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/778 ,  H01L21/768 ,  H01L29/66 ,  H01L21/67

Abstract: A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.

公开(公告)号：US11355626B2

公开(公告)日：2022-06-07

申请号：US16574094

申请日：2019-09-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/267 ,  H01L29/15 ,  H01L29/20 ,  H01L29/04

Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.

公开(公告)号：US20190221562A1

公开(公告)日：2019-07-18

申请号：US15880492

申请日：2018-01-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsu Ting ,  Yu-Ying Lin ,  Yen-Hsing Chen ,  Chun-Jen Chen ,  Chun-Wei Yu ,  Keng-Jen Lin ,  Yu-Ren Wang

IPC: H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0653 ,  H01L29/66545

Abstract: A semiconductor device includes a semiconductor substrate, an isolation structure, a cladding layer, and a gate structure. The semiconductor substrate includes fin shaped structures. The isolation structure is disposed between the fin shaped structures. Each of the fin shaped structures includes a first portion disposed above a top surface of the isolation structure and a second portion disposed on the first portion. A width of the second portion is smaller than a width of the first portion. The cladding layer is disposed on the first portion and the second portion of each of the fin shaped structures. The cladding layer includes a curved surface. The gate structure is disposed straddling the fin shaped structures.

公开(公告)号：US20230268397A1

公开(公告)日：2023-08-24

申请号：US18135206

申请日：2023-04-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

CPC classification number: H01L29/151 ,  H01L29/7786

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

公开(公告)号：US11664426B2

公开(公告)日：2023-05-30

申请号：US17685400

申请日：2022-03-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

CPC classification number: H01L29/151 ,  H01L29/7786

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

公开(公告)号：US20220320292A1

公开(公告)日：2022-10-06

申请号：US17683288

申请日：2022-02-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

公开(公告)号：US20220093778A1

公开(公告)日：2022-03-24

申请号：US17100935

申请日：2020-11-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hsing Chen ,  Yu-Ming Hsu ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/778 ,  H01L29/66 ,  H01L21/67 ,  H01L21/768

Abstract: A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.

公开(公告)号：US10366991B1

公开(公告)日：2019-07-30

申请号：US15880492

申请日：2018-01-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsu Ting ,  Yu-Ying Lin ,  Yen-Hsing Chen ,  Chun-Jen Chen ,  Chun-Wei Yu ,  Keng-Jen Lin ,  Yu-Ren Wang

IPC: H01L27/088 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/06

Abstract: A semiconductor device includes a semiconductor substrate, an isolation structure, a cladding layer, and a gate structure. The semiconductor substrate includes fin shaped structures. The isolation structure is disposed between the fin shaped structures. Each of the fin shaped structures includes a first portion disposed above a top surface of the isolation structure and a second portion disposed on the first portion. A width of the second portion is smaller than a width of the first portion. The cladding layer is disposed on the first portion and the second portion of each of the fin shaped structures. The cladding layer includes a curved surface. The gate structure is disposed straddling the fin shaped structures.

公开(公告)号：US20190221655A1

公开(公告)日：2019-07-18

申请号：US15869087

申请日：2018-01-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hsing Chen ,  Chun-Yu Chen ,  Chung-Ting Huang ,  Zih-Hsuan Huang ,  Yu-Chien Sung

IPC: H01L29/66 ,  H01L21/3213 ,  H01L21/033 ,  H01L29/78 ,  H01L27/088 ,  H01L29/06

CPC classification number: H01L29/66636 ,  H01L21/033 ,  H01L21/32139 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7848

Abstract: A method for fabricating a semiconductor device is disclosed. A fin is formed on a substrate. The fin protrudes from a trench isolation layer on a substrate. The fin comprises a source region, a drain region and a channel region therebetween. A dummy gate strides across the fin and surrounding the channel region. An upper portion of the fin is removed so as to form a hollow channel underneath the dummy gate. A replacement channel layer is in-situ epitaxially grown in the hollow channel.