公开(公告)号：US12055849B2

公开(公告)日：2024-08-06

申请号：US17363380

申请日：2021-06-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Sheng-Lun Tseng ,  Yen-Ting Pan ,  Chih-Wei Hsu

IPC: G03F1/36 ,  G03F7/00 ,  H01L21/027

CPC classification number: G03F1/36 ,  G03F7/70441 ,  H01L21/0274

Abstract: A method for correcting a semiconductor mask pattern includes steps as follows: A pattern to be corrected in the semiconductor mask pattern is divided into a plurality of sub-blocks that are symmetrical to and coincide with each other. Then, an optical proximity correction (OPC) step is performed on one of the plurality of sub-blocks to obtain a modified template. At least one copy template is generated according to the modified template corresponding to the other ones of the plurality of sub-blocks. The modified template and the at least one copy template are spliced to form a correcting pattern to replace the original pattern to be corrected.