公开(公告)号：US12055849B2

公开(公告)日：2024-08-06

申请号：US17363380

申请日：2021-06-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Sheng-Lun Tseng ,  Yen-Ting Pan ,  Chih-Wei Hsu

IPC: G03F1/36 ,  G03F7/00 ,  H01L21/027

CPC classification number: G03F1/36 ,  G03F7/70441 ,  H01L21/0274

Abstract: A method for correcting a semiconductor mask pattern includes steps as follows: A pattern to be corrected in the semiconductor mask pattern is divided into a plurality of sub-blocks that are symmetrical to and coincide with each other. Then, an optical proximity correction (OPC) step is performed on one of the plurality of sub-blocks to obtain a modified template. At least one copy template is generated according to the modified template corresponding to the other ones of the plurality of sub-blocks. The modified template and the at least one copy template are spliced to form a correcting pattern to replace the original pattern to be corrected.

公开(公告)号：US20230350381A1

公开(公告)日：2023-11-02

申请号：US17749176

申请日：2022-05-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Ting Pan ,  Chung-Yi Chiu

IPC: G05B19/4099 ,  G06T7/13 ,  G06T7/73 ,  G03F7/20

CPC classification number: G05B19/4099 ,  G06T7/13 ,  G06T7/73 ,  G03F7/705 ,  G06T2207/10061 ,  G06T2207/30148 ,  G05B2219/35134

Abstract: A method of simulating a 3D feature profile by using a scanning electron microscope (SEM) image includes providing an SEM image. The SEM image includes a feature pattern within a material layer. The feature pattern includes an inner edge and an outer edge. The outer edge surrounds the inner edge. Then, the positions of the inner edge and the outer edge of the feature pattern are identified. Latter, a side edge region is defined based on the positions of the inner edge and the outer edge. Subsequently, a side edge model is generated automatically to simulate a profile of the feature pattern in the side edge region. Finally, a 3D feature profile is automatically output based on the position of the inner edge, the position of the outer edge, the thickness of the material layer and the side edge profile.