中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

2 records (took 0.012 seconds)

    METHOD OF FLATTENING A WAFER
    1.
    发明申请
    METHOD OF FLATTENING A WAFER 有权
    平铺方法

    公开(公告)号：US20150340222A1

    公开(公告)日：2015-11-26

    申请号：US14818293

    申请日：2015-08-04

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Tai-Heng Yu ,  Chih-Yueh Li

    IPC: H01L21/02 ,  H01L21/308 ,  H01L21/306

    CPC classification number: H01L21/02021 ,  H01L21/02087 ,  H01L21/30625 ,  H01L21/3083 ,  H01L21/6708 ,  H01L21/68735

    Abstract: The wafer bevel etching apparatus of the present invention includes a wafer-protecting mask to cover parts of a wafer. A central region and a wafer bevel region surrounding the central region are defined on the wafer. The wafer-protecting mask includes a center sheltering region and at least one wafer bevel sheltering region. The center sheltering region can completely shelter the central region of the wafer, and the wafer bevel sheltering region extends from the outside edge of the center sheltering region, shelters parts of the wafer bevel region, and exposes the other parts of the wafer bevel region.

    Abstract translation: 本发明的晶片斜面蚀刻装置包括用于覆盖晶片的部分的晶片保护掩模。 在晶片上限定了围绕中心区域的中心区域和晶片斜面区域。 晶片保护掩模包括中心遮蔽区域和至少一个晶片斜面遮蔽区域。 中心遮蔽区可以完全遮蔽晶片的中心区域，并且晶片斜面遮蔽区域从中心遮蔽区域的外边缘延伸，晶片斜面区域的遮蔽部分露出晶片斜面区域的其他部分。

Patent Agency Ranking