公开(公告)号：US09502305B2

公开(公告)日：2016-11-22

申请号：US14060568

申请日：2013-10-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Wei Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Jei-Ming Chen ,  Tsai-Fu Hsiao

IPC: H01L21/8238 ,  H01L21/265 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/823814 ,  H01L21/26506 ,  H01L21/823807 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/7843

Abstract: A CMOS transistor and a method for manufacturing the same are disclosed. A semiconductor substrate having at least a PMOS transistor and an NMOS transistor is provided. The source/drain of the PMOS transistor comprises SiGe epitaxial layer. A carbon implantation process is performed to form a carbon-doped layer in the top portion of the source/drain of the PMOS transistor. A silicide layer is formed on the source/drain. A CESL is formed on the PMOS transistor and the NMOS transistor. The formation of the carbon-doped layer is capable of preventing Ge out-diffusion.

Abstract translation: 公开了一种CMOS晶体管及其制造方法。 提供了至少具有PMOS晶体管和NMOS晶体管的半导体衬底。 PMOS晶体管的源极/漏极包括SiGe外延层。 执行碳注入工艺以在PMOS晶体管的源极/漏极的顶部部分中形成碳掺杂层。 在源极/漏极上形成硅化物层。 在PMOS晶体管和NMOS晶体管上形成CESL。 碳掺杂层的形成能够防止Ge扩散。

公开(公告)号：US20140038374A1

公开(公告)日：2014-02-06

申请号：US14060568

申请日：2013-10-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Wei Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Jei-Ming Chen ,  Tsai-Fu Hsiao

IPC: H01L21/8238

CPC classification number: H01L21/823814 ,  H01L21/26506 ,  H01L21/823807 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/7843

Abstract: A CMOS transistor and a method for manufacturing the same are disclosed. A semiconductor substrate having at least a PMOS transistor and an NMOS transistor is provided. The source/drain of the PMOS transistor comprises SiGe epitaxial layer. A carbon implantation process is performed to form a carbon-doped layer in the top portion of the source/drain of the PMOS transistor. A silicide layer is formed on the source/drain. A CESL is formed on the PMOS transistor and the NMOS transistor. The formation of the carbon-doped layer is capable of preventing Ge out-diffusion.

Abstract translation: 公开了一种CMOS晶体管及其制造方法。 提供了至少具有PMOS晶体管和NMOS晶体管的半导体衬底。 PMOS晶体管的源极/漏极包括SiGe外延层。 执行碳注入工艺以在PMOS晶体管的源极/漏极的顶部部分中形成碳掺杂层。 在源极/漏极上形成硅化物层。 在PMOS晶体管和NMOS晶体管上形成CESL。 碳掺杂层的形成能够防止Ge扩散。