公开(公告)号：US11527605B2

公开(公告)日：2022-12-13

申请号：US17364935

申请日：2021-07-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shu-Ji Chen ,  Jing Feng ,  Xiao-Hong Jiang ,  Ching-Hwa Tey

IPC: H01L49/02 ,  H01L21/66 ,  H01L23/522 ,  H01L21/67 ,  G01R27/26 ,  G01R31/26

Abstract: A method for fabricating a MOMCAP includes steps as follows: An Nth metal layer is formed on a substrate according to an Nth expected capacitance value of the Nth metal layer. An Nth capacitance error value between an Nth actual capacitance value of the Nth metal layer and the Nth expected capacitance value is calculated. An N+1th expected capacitance value of an N+1th metal layer is adjusted to form an N+1th actual capacitance value according to the Nth capacitance error value, and the N+1th metal layer with an N+1th actual capacitance value is formed on the Nth metal layer according to the adjusted N+1th expected capacitance value, to make the sum of the Nth actual capacitance value and the N+1th actual capacitance value equal to the sum of the Nth expected capacitance value and the N+1th expected capacitance value. N is an integer greater than 1.