公开(公告)号：US09305887B2

公开(公告)日：2016-04-05

申请号：US13911062

申请日：2013-06-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Fan-Qing Zeng ,  Ching Hwa Tey ,  Xiaoqing Xu

IPC: H01L23/58 ,  H01L23/00

CPC classification number: H01L23/585 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a seal ring structure includes the following steps. A substrate is provided, and the substrate includes a seal ring region. A metal stack is formed in the seal ring region. A first dielectric layer covering the metal stack is formed. A part of the first dielectric layer is removed to form an opening to expose the metal stack, and at least a side of the opening is not perpendicular to a top surface of the first dielectric layer. A conductive layer is formed to fill the opening. A second dielectric layer is formed to continuously cover the first dielectric layer and the conductive layer, and the second dielectric layer has a v-shaped surface totally overlapping the conductive layer.

Abstract translation: 形成密封环结构的方法包括以下步骤。 提供基板，并且基板包括密封环区域。 在密封圈区域中形成金属叠层。 形成覆盖金属叠层的第一介电层。 去除第一电介质层的一部分以形成露出金属叠层的开口，并且开口的至少一侧不垂直于第一电介质层的顶表面。 形成导电层以填充开口。 形成第二电介质层以连续地覆盖第一电介质层和导电层，并且第二电介质层具有与导电层完全重叠的V形表面。

公开(公告)号：US20140361438A1

公开(公告)日：2014-12-11

申请号：US13911062

申请日：2013-06-05

Applicant: United Microelectronics Corp.

Inventor： Fan-Qing Zeng ,  Ching Hwa Tey ,  Xiaoqing Xu

IPC: H01L23/58 ,  H01L21/768

CPC classification number: H01L23/585 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a seal ring structure includes the following steps. A substrate is provided, and the substrate includes a seal ring region. A metal stack is formed in the seal ring region. A first dielectric layer covering the metal stack is formed. A part of the first dielectric layer is removed to form an opening to expose the metal stack, and at least a side of the opening is not perpendicular to a top surface of the first dielectric layer. A conductive layer is formed to fill the opening. A second dielectric layer is formed to continuously cover the first dielectric layer and the conductive layer, and the second dielectric layer has a v-shaped surface totally overlapping the conductive layer.

Abstract translation: 形成密封环结构的方法包括以下步骤。 提供基板，并且基板包括密封环区域。 在密封圈区域中形成金属叠层。 形成覆盖金属叠层的第一介电层。 去除第一电介质层的一部分以形成露出金属叠层的开口，并且开口的至少一侧不垂直于第一电介质层的顶表面。 形成导电层以填充开口。 形成第二电介质层以连续地覆盖第一电介质层和导电层，并且第二介电层具有与导电层完全重叠的V形表面。