公开(公告)号：US20250169368A1

公开(公告)日：2025-05-22

申请号：US18407360

申请日：2024-01-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chau-Chung Hou ,  Kun-Ju Li ,  Hsin-Jung Liu ,  Ching-Hua Hsu ,  Chen-Yi Weng ,  Chih-Yueh Li ,  Hsin-Kuo Hsu ,  Ying-Chu Chen ,  Yi-Chen Hsiao

IPC: H10N50/01 ,  G11C11/16 ,  H10B61/00 ,  H10N50/80

Abstract: A method of forming a semiconductor structure is disclosed. A substrate is provided having a memory array area and a peripheral region. A memory structure is formed on the substrate in the memory array area. A step height is formed between the memory array area and the peripheral region. A dielectric layer is deposited. The dielectric layer covers the memory structure. A reverse etching process is performed to remove part of the dielectric layer from the memory array area, thereby forming an upwardly protruding wall structure along the perimeter of the memory array area, wherein the thickness of the dielectric layer in the memory array area increases from the central area of the memory array area to the periphery of the memory array area. A polishing process is performed on the dielectric layer to remove the upwardly protruding wall structure from the memory array area.