公开(公告)号：US11960203B2

公开(公告)日：2024-04-16

申请号：US17749114

申请日：2022-05-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Lai ,  Chih-Hsien Tang

IPC: G03F7/00 ,  B29C59/02

CPC classification number: G03F7/0002 ,  B29C59/022 ,  B29C59/026

Abstract: A method of forming patterns on a substrate by double nanoimprint processes includes providing a first replicate mold and a second replicate mold. The first replicate mold includes numerous first patterns. The second replicate mold includes at least one second pattern. The second pattern corresponds to at least one of the first patterns. Later, a first substrate is provided. A first polymeric compound layer is coated on the first substrate. Next, the first patterns are nanoimprinted into the first polymeric compound layer. Subsequently, the first substrate is etched by taking the first polymeric compound layer as a mask. After that, a second polymeric compound layer is coated on the first substrate. Later, the second pattern is nanoimprinted into the second polymeric compound layer. Finally, the first substrate is etched by taking the second polymeric compound layer as a mask.

公开(公告)号：US20230350286A1

公开(公告)日：2023-11-02

申请号：US17749114

申请日：2022-05-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Lai ,  Chih-Hsien Tang

IPC: G03F7/00 ,  B29C59/02

CPC classification number: G03F7/0002 ,  B29C59/022 ,  B29C59/026

Abstract: A method of forming patterns on a substrate by double nanoimprint processes includes providing a first replicate mold and a second replicate mold. The first replicate mold includes numerous first patterns. The second replicate mold includes at least one second pattern. The second pattern corresponds to at least one of the first patterns. Later, a first substrate is provided. A first polymeric compound layer is coated on the first substrate. Next, the first patterns are nanoimprinted into the first polymeric compound layer. Subsequently, the first substrate is etched by taking the first polymeric compound layer as a mask. After that, a second polymeric compound layer is coated on the first substrate. Later, the second pattern is nanoimprinted into the second polymeric compound layer. Finally, the first substrate is etched by taking the second polymeric compound layer as a mask.