NANOFABRICATION METHOD WITH CORRECTION OF DISTORTION WITHIN AN IMPRINT SYSTEM

    公开(公告)号:US20240066786A1

    公开(公告)日:2024-02-29

    申请号:US17823411

    申请日:2022-08-30

    IPC分类号: B29C59/00 B29C59/02 B82Y40/00

    摘要: A nanofabrication method comprises receiving information regarding in-plane distortion of a substrate, modeling target out-of-plane displacement as a summation of a plurality of geometric modes represented by a linear combination of basis functions, generating a first drop pattern of formable material based on the modeled out-of-plane displacement, generating a second drop pattern by merging the first drop pattern with a drop pattern based on a topography of the template and the substrate; dispensing drops of formable material onto the substrate according to the second drop pattern, and contacting the dispensed drops with the template to form a film. The plurality of geometric modes are modified using a plurality of unique predetermined correction coefficients. Each unique predetermined correction coefficient represents a relationship between an analytically determined amount of in-plane distortion and an empirically determined amount of in-plane distortion.

    TEMPLATE, PATTERN FORMING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

    公开(公告)号:US20230418155A1

    公开(公告)日:2023-12-28

    申请号:US18172540

    申请日:2023-02-22

    发明人: Hirotaka TSUDA

    IPC分类号: G03F7/00 B29C59/02

    摘要: A template includes a first region having a first face on a side opposite to a main face and a first pattern including a convex-concave portion provided on the first face, and a second region, provided around the first region, having a second face on the side opposite to the main face, a second pattern including a protruding portion protruding from the second face, and an optical layer provided on the second face and the second pattern, wherein the second face is positioned farther to the main surface side than a bottommost face of the irregular portion.

    IMPRINT APPARATUS, IMPRINT METHOD AND ARTICLE MANUFACTURING METHOD

    公开(公告)号:US20230321895A1

    公开(公告)日:2023-10-12

    申请号:US18194942

    申请日:2023-04-03

    发明人: Takehiko UENO

    IPC分类号: B29C59/00 B29C59/02

    摘要: An imprint apparatus including a mold deformation mechanism configured to deform a mold by applying a pressure to the mold, a substrate deformation mechanism configured to deform the substrate by applying a pressure to the substrate, a measurement unit configured to measure a deformation amount of the mold and a deformation amount of the substrate during separating the mold from the cured imprint material on the substrate, and a control unit configured to control, during the separating, a pressure to be applied to the mold by the mold deformation mechanism and a pressure to be applied to the substrate by the substrate deformation mechanism based on the deformation amounts measured by the measurement unit such that a difference between the deformation amount of the mold and the deformation amount of the substrate falls within an allowable range.